2SC6097-E

Single Bipolar Transistors Overview

The onsemi 2SC6097-E is a single NPN bipolar junction transistor designed for general-purpose switching and amplification applications. It features a maximum collector-emitter voltage of 60 V and a continuous collector current rating of 3 A. The device offers a transition frequency of 390 MHz and a maximum power dissipation of 800 mW. Key electrical characteristics include a DC current gain (hFE) of at least 300 at 100 mA and 2 V, with a low saturation voltage of 135 mV at 1 A. It is housed in a TO-251-3 short lead (IPAK/TO-251AA) through-hole package.

Single Bipolar Transistors Feature Summary

• High-speed switching capability with a transition frequency of 390 MHz
• Low collector-to-emitter saturation voltage for efficient conduction
• Robust current handling with a 3 A maximum collector current rating
• High DC current gain ensuring effective amplification performance

Single Bipolar Transistors Applications

• DC/DC converter circuits
• Relay driver stages
• Lamp driver interfaces
• Motor driver outputs

Single Bipolar Transistors Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official documentation. Confirm the specific suffix matches the required package variant. Note that this part may be subject to end-of-life status; consult the latest product change notice for availability and alternative sourcing options before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when a high-current NPN transistor with moderate voltage ratings is required for through-hole assembly. Ensure the design accounts for the 800 mW power dissipation limit and thermal management requirements. Verify that the 60 V breakdown voltage aligns with the circuit's peak operating conditions and transient spikes.

Single Bipolar Transistors Part Context

This device belongs to the 2SC6097 series of NPN transistors manufactured by onsemi. It utilizes FBET or MBIT process technology to achieve low saturation voltage and high allowable power dissipation. The component is designed for use in various electronic systems requiring reliable switching performance in a standard through-hole footprint.

Single Bipolar Transistors Replacement Considerations

Consult the manufacturer's datasheet for officially confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before substituting. Check for any recent product change notices regarding obsolescence or form-fit-function changes.