2SC6135,LF

Single Bipolar Transistors Overview

The Toshiba 2SC6135 is a silicon NPN epitaxial planar transistor designed for high-speed switching applications. It features a high DC current gain ranging from 400 to 1000 at a collector current of 0.1 A, and a low collector-emitter saturation voltage with a maximum of 0.17 V. The device supports a continuous collector current of 1.0 A and a pulse current of 2.0 A. Key electrical ratings include a collector-base voltage of 100 V, a collector-emitter voltage of 50 V, and an emitter-base voltage of 7 V. It operates within a junction temperature range up to 150 °C and utilizes a compact SOT-323 (2-2U1A) surface-mount package.

Single Bipolar Transistors Feature Summary

• High DC current gain ensuring efficient signal amplification and control
• Low collector-emitter saturation voltage for reduced power loss
• Fast switching speed capabilities suitable for rapid circuit transitions

Single Bipolar Transistors Applications

• DC-DC converter circuits
• Strobe driver applications
• General high-speed switching systems

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm packaging details and compliance status. Ensure the component meets the required environmental standards for your specific deployment. Cross-reference the datasheet revision date to guarantee access to the most current reliability data and handling precautions before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high current gain combined with fast switching performance. Evaluate the thermal dissipation requirements carefully, as the device offers 800 mW on ceramic boards and 500 mW on FR4 substrates. Confirm that the operating voltage and current levels remain strictly within the absolute maximum ratings to maintain long-term operational reliability.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's lineup of silicon NPN epitaxial transistors engineered for robust performance in compact electronic designs. It serves as a specialized solution for modern power management and signal processing tasks where space constraints and switching efficiency are critical design parameters.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba substitution guides for verified equivalent models. Do not assume compatibility based solely on similar pin configurations or generic specifications without validating electrical characteristics against the original datasheet.

Single Bipolar Transistors FAQ

What is the typical fall time for the 2SC6135?

The typical fall time (tf) is 85 ns under standard test conditions.

How does the package type affect power dissipation?

Power dissipation is rated at 800 mW when mounted on a ceramic board and 500 mW when mounted on an FR4 board.

What is the minimum DC current gain specified?

The minimum DC current gain (hFE) is 400 when measured at a collector current of 0.1 A.