Single Bipolar Transistors 2SC6139,T2F(M product image

2SC6139,T2F(M

  • Description:TRANS NPN 160V 1.5A MSTM
  • Series:-

SKU:f9fdb32f27f8 Category: Brand:

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2SC6139,T2F(M is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 160V 1.5A MSTM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC6139,T2F(M

  • Description:TRANS NPN 160V 1.5A MSTM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1.5 A
  • Voltage - Collector Emitter Breakdown (Max):160 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:140 @ 100mA, 5V
  • Power - Max:1 W
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:SC-71
  • Supplier Device Package:MSTM
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC6139,T2F(M

2SC6139,T2F(M

Single Bipolar Transistors Overview

The Toshiba 2SC6139 is a silicon NPN epitaxial planar transistor designed for audio frequency amplifier applications. It features a high collector-emitter breakdown voltage of 160 V and supports a continuous DC collector current of 1.5 A with a pulse rating of 2.5 A. The device exhibits a typical transition frequency (fT) of 100 MHz and a low collector output capacitance of 12 pF. Electrical characteristics include a minimum DC current gain (hFE) of 80 at 1 mA and 140 to 280 at 100 mA. It operates within a junction temperature range up to 150 °C and is housed in a TO-92 package.

Single Bipolar Transistors Feature Summary

  • High collector-emitter breakdown voltage rated at 160 V
  • Low collector output capacitance for signal integrity
  • High transition frequency suitable for audio amplification
  • Complementary pairing with the 2SA2219 PNP transistor

Single Bipolar Transistors Applications

  • Audio frequency amplifier circuits
  • General-purpose switching applications
  • Driver stages in electronic equipment

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as environmental compliance varies by production lot. Confirm that the ordering suffix 'T2F(M' corresponds to the specific tape-and-reel packaging configuration required for automated assembly processes. Ensure design adheres to the derating concepts outlined in the Toshiba Semiconductor Reliability Handbook to maintain long-term operational stability under thermal stress.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage handling capabilities combined with moderate current drive. The 160 V rating provides significant headroom for power supply variations compared to standard 50 V transistors. Consider the complementary 2SA2219 for push-pull configurations to ensure matched performance characteristics. Evaluate the 1 W power dissipation limit against the expected ambient operating conditions to determine necessary heat sinking requirements.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba general-purpose small-signal transistor family utilizing an epitaxial planar process. It serves as a robust alternative for legacy designs requiring higher voltage tolerance than standard audio transistors. The TO-92 form factor allows for easy integration into through-hole PCB layouts commonly found in consumer electronics and industrial control modules.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA2219 as the complementary PNP counterpart. No other direct substitute part numbers are documented in the provided source material.

2SC6139,T2F(M2SC6139,T2F(M

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