Single Bipolar Transistors 2SCR372PHZGT100Q product image

2SCR372PHZGT100Q

$1.02
  • Description:TRANS NPN 120V 0.7A SOT-89
  • Series:-

SKU:0d6882cd7b9c Category: Brand:

  
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2SCR372PHZGT100Q is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 120V 0.7A SOT-89. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SCR372PHZGT100Q

  • Description:TRANS NPN 120V 0.7A SOT-89
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):700 mA
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 100mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:220MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:SOT-89
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SCR372PHZGT100Q

2SCR372PHZGT100Q

Single Bipolar Transistors Overview

The 2SCR372PHZGT100Q is a single NPN silicon bipolar junction transistor (BJT) designed for middle power applications. It features a collector-emitter voltage (VCEO) of 120 V and a continuous collector current of 0.7 A. The device operates in an SOT-89-3 surface-mount package with a maximum power dissipation of 500 mW. Key electrical characteristics include a DC current gain (hFE) ranging from 120 to 390 at -100 mA, a collector-emitter saturation voltage of 360 mV, and a transition frequency (fT) of 300 MHz. It supports a maximum operating temperature of +150°C.

Single Bipolar Transistors Feature Summary

  • Low collector-emitter saturation voltage for efficient switching performance
  • Automotive-grade reliability compliant with AEC-Q101 standards
  • High DC current gain suitable for driver applications

Single Bipolar Transistors Applications

  • Automotive low-frequency amplifier circuits
  • General-purpose driver transistors
  • Middle power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix GT100Q against official ROHM documentation to confirm packaging and automotive qualification status. Ensure the ordering part number matches the required tape-and-reel quantity. Cross-reference the datasheet revision date to validate current electrical parameters and compliance certifications before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-voltage NPN switching with moderate current capacity in a compact SOT-89 footprint. Consider the 500 mW power dissipation limit and thermal management requirements for the intended application environment. Verify that the 120 V breakdown voltage aligns with the circuit's maximum supply rails and transient conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SxR series of middle power transistors manufactured by ROHM Semiconductor. It is specifically engineered for automotive and industrial applications where reliability under harsh conditions is critical. The device complements other members of the family, such as the 2SAR372PHZGT100R PNP counterpart, offering matched characteristics for complementary push-pull configurations.

Single Bipolar Transistors Replacement Considerations

The 2SCR372P5 is listed as a similar level replacement with the same pinout and package. Verify if the 2SCR372PHZG variant meets the specific automotive grade requirements of the original design.

2SCR372PHZGT100Q2SCR372PHZGT100Q
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