2SCR375PHZGT100Q

Single Bipolar Transistors Overview

The 2SCR375PHZGT100Q is a single NPN silicon bipolar junction transistor (BJT) manufactured by ROHM Semiconductor. It is housed in an SOT-89-3 surface-mount package and designed for middle power applications. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 120 V, a maximum collector-base voltage (VCBO) of 120 V, and a maximum emitter-base voltage (VEBO) of 6 V. The device supports a continuous DC collector current of 1.5 A with a power dissipation rating of 500 mW. It features a transition frequency (fT) of 200 MHz and a maximum operating temperature of +150°C.

Single Bipolar Transistors Feature Summary

• Single NPN configuration optimized for middle power switching and amplification tasks
• High thermal stability with a maximum junction temperature rating of +150°C
• Robust voltage handling capabilities with 120 V breakdown ratings for collector-emitter and collector-base terminals

Single Bipolar Transistors Applications

• Automotive electronic circuits requiring high reliability
• General-purpose driver stages in consumer electronics
• Low-frequency amplifier applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix GT100Q against official ROHM documentation to confirm packaging type and compliance status. Ensure the ordering part number matches the required reel or cut-tape format. Cross-reference the manufacturer part number with the latest datasheet to validate RoHS and REACH compliance details before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a 120 V NPN BJT with 1.5 A current capacity is required in an SOT-89 package. Compare the 500 mW power dissipation limit against circuit requirements to ensure adequate thermal management. Consider the 200 MHz transition frequency for suitable bandwidth needs in switching or linear operation modes.

Single Bipolar Transistors Part Context

This part belongs to the 2SxR series of bipolar transistors from ROHM Semiconductor. It shares the SOT-89 form factor with other devices in the family but differs in polarity and voltage ratings. The 2SCR375PHZGT100Q serves as the NPN counterpart to PNP variants like the 2SAR375PHZGT100R within the same product line.

Single Bipolar Transistors Replacement Considerations

The 2SCR375P5T100Q is documented as a similar level replacement with the same pinout and package. Verify that the 500 mW power dissipation rating of the 2SCR375P5T100Q meets the application's thermal requirements compared to the original part.