2SCR502EBTL

Single Bipolar Transistors Overview

The 2SCR502EBTL is an NPN bipolar junction transistor (BJT) manufactured by ROHM Semiconductor, designed for general-purpose signal amplification. It operates in a surface-mount SOT-416FL package with three terminals. Key electrical specifications include a collector-emitter voltage of 30V and a continuous collector current of 0.5A. The device features a power dissipation rating of 0.15W and a DC current gain (hFE) ranging from 200 to 500 at 50mA. It complies with the AEC-Q101 automotive grade standard and supports a maximum operating temperature of +150°C.

Single Bipolar Transistors Feature Summary

• Complies with AEC-Q101 automotive reliability standards for high-grade performance.
• Provides large collector current capability relative to its small form factor.
• Features low collector-emitter saturation voltage for efficient switching.

Single Bipolar Transistors Applications

• General-purpose signal amplification circuits
• Low-frequency amplification applications
• Automotive electronic systems requiring AEC-Q101 compliance

Single Bipolar Transistors Procurement Notes

Verify that the specific ordering suffix matches the required packaging configuration, as variations exist within the product family. Confirm that the design intent aligns with the component's status as a standard-grade product not recommended for new automotive designs if applicable to your specific use case. Ensure compatibility with the SOT-416FL footprint during PCB layout validation.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with moderate current handling and automotive-grade reliability is required. It serves as a direct replacement for the discontinued 2SCR502E3HZG series. Consider the 0.15W power dissipation limit and the 30V voltage rating to ensure operation within safe boundaries for low-power amplification tasks.

Single Bipolar Transistors Part Context

This part belongs to ROHM's lineup of surface-mount bipolar transistors optimized for space-constrained electronics. The 2SCR502EBTL specifically addresses the need for reliable amplification in automotive environments while maintaining a small physical footprint. It complements other devices in the series, such as the complementary PNP types, to facilitate balanced circuit designs.

Single Bipolar Transistors Replacement Considerations

The 2SCR502E3HZG is documented as a similar specification replacement or successor part. Verify pinout compatibility and exact parameter tolerances before substitution. The 2SCR502U3HZG offers a different package option but shares similar electrical characteristics for general amplification needs.

Single Bipolar Transistors FAQ

Is the 2SCR502EBTL suitable for new automotive designs?

No, official documentation states that this product is not recommended for new automotive designs, although it meets AEC-Q101 standards.

What is the DC current gain range for this transistor?

The DC current gain (hFE) ranges from 200 to 500 when tested at a collector current of 50mA.

What is the maximum power dissipation rating?

The maximum power dissipation (Pd) for the 2SCR502EBTL is rated at 0.15W.