2SCR514PFRAT100

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SCR514PFRAT100 is an NPN silicon bipolar junction transistor (BJT) designed for middle power applications. It features a collector-emitter voltage (VCEO) of 80 V and a continuous collector current (Ic) of 700 mA. The device operates in the SOT-89-3 (MPT3) surface-mount package with a maximum power dissipation of 500 mW. Key electrical characteristics include a DC current gain (hFE) ranging from 120 to 390 at 100 mA, a transition frequency (fT) of 320 MHz, and a collector-emitter saturation voltage of 300 mV. It supports AEC-Q101 automotive grade standards.

Single Bipolar Transistors Feature Summary

• NPN polarity configuration optimized for driver transistor roles
• Low collector-emitter saturation voltage for efficient switching
• Automotive-grade reliability compliant with AEC-Q101 standards
• Surface-mount MPT3 package design for compact integration

Single Bipolar Transistors Applications

• Automotive electronic control unit driver circuits
• General-purpose low-frequency amplification stages
• Switching applications within middle power transistor requirements

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix PFRAT100 against the manufacturer's latest datasheet to confirm tape-and-reel packaging quantities and marking codes. Ensure the component meets the required AEC-Q101 qualification level if used in automotive designs. Cross-reference the part number alias 2SCR514P5 for compatibility checks. Confirm RoHS compliance status through official documentation before procurement.

Single Bipolar Transistors Selection Notes

Select this component when an NPN BJT with 80 V breakdown and 700 mA current capacity is required in an SOT-89 package. Consider the 320 MHz transition frequency for high-speed switching needs. Evaluate the hFE range of 120–390 for gain consistency. Compare power dissipation limits against thermal management capabilities in the target application environment.

Single Bipolar Transistors Part Context

This part belongs to the 2SxR series of middle power transistors manufactured by ROHM Semiconductor. It serves as a replacement or alternative for similar NPN drivers in the 80V/0.7A class. The MPT3 package provides a standardized footprint for surface-mount assembly processes commonly used in consumer and automotive electronics manufacturing lines.

Single Bipolar Transistors Replacement Considerations

The 2SCR514PHZGT100 is listed as a recommended alternative with identical pinout and package specifications. Verify that the substitute maintains the same AEC-Q101 automotive qualification and electrical parameters before implementation.