Single Bipolar Transistors 2SCR514PT100 product image

2SCR514PT100

$0.71
  • Description:TRANS NPN 80V 0.7A MPT3
  • Series:-

SKU:6bb66c22fae4 Category: Brand:

  
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2SCR514PT100 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 80V 0.7A MPT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SCR514PT100

  • Description:TRANS NPN 80V 0.7A MPT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):700 mA
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 15mA, 300mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 100mA, 3V
  • Power - Max:2 W
  • Frequency - Transition:320MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:MPT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SCR514PT100

2SCR514PT100

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SCR514PT100 is a single NPN bipolar junction transistor (BJT) designed for surface-mount applications. It operates with a maximum collector-emitter voltage of 80 V and supports a continuous collector current of 700 mA. The device features a low collector-emitter saturation voltage of 300 mV at specified test conditions, ensuring efficient switching performance. Electrical characteristics include a DC current gain ranging from 120 to 390 at 100 mA and 3 V. The component is housed in an MPT3 package, equivalent to SOT-89-3, and offers a power dissipation capacity of 2 W. It maintains a transition frequency of 320 MHz and functions reliably up to a maximum junction temperature of +150°C.

Single Bipolar Transistors Feature Summary

  • Low collector-emitter saturation voltage for efficient switching
  • High DC current gain within the 120 to 390 range
  • Robust thermal stability supporting operation up to +150°C

Single Bipolar Transistors Applications

  • Driver transistors in electronic circuits
  • General-purpose amplification tasks
  • Switching applications requiring medium power handling

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official ROHM documentation to confirm packaging type and tape specifications. Ensure the selected variant matches the required reel or cut-tape configuration for automated assembly processes. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when an NPN BJT with 80 V breakdown and 700 mA current capability is required in a compact SMD form factor. The MPT3 package provides a balance between power dissipation and board space efficiency. Consider the 320 MHz transition frequency for applications involving moderate signal frequencies. Verify that the thermal management design accommodates the 2 W power dissipation rating under expected operating loads.

Single Bipolar Transistors Part Context

This component belongs to the 2SxR series of bipolar transistors manufactured by ROHM Semiconductor. The series includes various NPN and PNP variants optimized for driver and amplifier roles. The 2SCR514PT100 specifically addresses needs for medium-power switching in surface-mount designs, offering standardized pinouts compatible with common footprint requirements in consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

The 2SCR514PHZGT100 is documented as a similar level replacement with identical pinout and package specifications. Both parts share the same electrical ratings and physical dimensions, allowing for direct substitution in existing designs without circuit modification.

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