Single Bipolar Transistors 2SCR553PHZGT100 product image

2SCR553PHZGT100

$0.77
  • Description:TRANS NPN 50V 2A SOT-89
  • Series:-

SKU:db59e524b170 Category: Brand:

  
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2SCR553PHZGT100 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 50V 2A SOT-89. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SCR553PHZGT100

  • Description:TRANS NPN 50V 2A SOT-89
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:350mV @ 35mA, 700mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 50mA, 2V
  • Power - Max:500 mW
  • Frequency - Transition:360MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:SOT-89
  • Grade:Automotive
  • Qualification:AEC-Q101

Single Bipolar Transistors datasheet and documents for 2SCR553PHZGT100

2SCR553PHZGT100

Single Bipolar Transistors Overview

The 2SCR553PHZGT100 is a single NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCEO) of 50 V and a maximum DC collector current of 2 A. The device operates in an SOT-89-3 surface-mount package with a power dissipation rating of 2 W. Key electrical parameters include a transition frequency (fT) of 360 MHz, a collector-emitter saturation voltage of 350 mV, and a DC current gain (hFE) ranging from 180 to 450 at 50 mA and 2 V. The component supports a maximum operating temperature of +150°C.

Single Bipolar Transistors Feature Summary

  • Designed as a middle-power transistor suitable for automotive applications
  • Features low collector-emitter saturation voltage for efficient switching
  • High DC current gain ensures effective amplification performance

Single Bipolar Transistors Applications

  • Automotive circuit driver stages
  • General-purpose switching applications
  • Low-frequency amplifier circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm packaging type, as variations exist between tape-and-reel and cut-tape formats. Confirm RoHS compliance status through official datasheets prior to integration. Ensure design compatibility with the SOT-89-3 footprint and thermal management requirements specified for 2 W dissipation. Cross-reference part numbers to distinguish between similar variants like 2SCR553PT100 which may share specifications but differ in package or marking.

Single Bipolar Transistors Selection Notes

Select this component when a 50 V NPN BJT with 2 A current capacity is required in a compact SOT-89 package. It is appropriate for designs needing high current gain and moderate speed up to 360 MHz. Consider the 2 W power dissipation limit and +150°C junction temperature capability for thermal planning. Compare against alternatives like 2SCR553P5T100 if pinout compatibility is critical.

Single Bipolar Transistors Part Context

This part belongs to ROHM's 2SCRx series of middle-power transistors designed for robust performance in demanding environments. The 2SCR553PHZGT100 specifically targets automotive-grade reliability while maintaining standard commercial electrical characteristics. It serves as a modern replacement for older discrete transistor solutions requiring higher efficiency and smaller form factors in power management and signal processing circuits.

Single Bipolar Transistors Replacement Considerations

The 2SCR553P5T100 is documented as a similar level replacement with the same pinout and package. Verify that the substitute meets all voltage, current, and thermal requirements before implementation.

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