2SCR554P5T100

Single Bipolar Transistors Overview

The 2SCR554P5T100 is a single NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It is housed in an SMD/SMT MPT3 (SOT-89-3) package designed for surface mount applications. The device supports a maximum collector-emitter voltage of 80 V and a continuous collector current of 1.5 A. Key electrical parameters include a DC current gain ranging from 120 to 390, a transition frequency of 300 MHz, and a power dissipation capacity of 1 W. It features a low collector-emitter saturation voltage of 100 mV and operates at temperatures up to +150°C. The component holds AEC-Q101 qualification for automotive reliability.

Single Bipolar Transistors Feature Summary

• Automotive-grade reliability certified under the AEC-Q101 standard.
• Optimized for driver applications with low collector-emitter saturation voltage.
• High DC current gain ensures efficient signal amplification and switching.
• Robust thermal performance supporting high junction temperature operation.

Single Bipolar Transistors Applications

• Automotive electronic control units requiring qualified components
• Driver transistor circuits in power management systems
• General-purpose amplification in industrial equipment

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix P5T100 against the official ROHM datasheet to confirm packaging details and tape-and-reel specifications. Ensure the procurement channel provides traceability documentation required for AEC-Q101 certified parts. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and avoid counterfeit components during sourcing.

Single Bipolar Transistors Selection Notes

Select this component when an NPN transistor with 80 V breakdown and 1.5 A current handling is required in a compact SOT-89 form factor. The 300 MHz transition frequency suits moderate-speed switching applications. Consider the 1 W power dissipation limit and thermal resistance characteristics for heat sinking requirements. Verify that the 120–390 hFE range aligns with the base drive circuit design constraints.

Single Bipolar Transistors Part Context

This part belongs to the ROHM 2SCR series of NPN bipolar transistors. The series is characterized by high current capability and low saturation voltage, making it suitable for power switching and driver roles. The MPT3 package provides a balance between thermal performance and space efficiency for surface-mount PCB layouts.

Single Bipolar Transistors Replacement Considerations

The 2SCR554PHZGTL is a verified equivalent within the same family offering identical electrical characteristics and pinout compatibility. Both parts share the NPN polarity, 80 V rating, and 1.5 A current capacity. Verify package consistency and automotive qualification status before substitution.