2SCR567F3TR

Single Bipolar Transistors Overview

The 2SCR567F3TR is a single NPN silicon bipolar junction transistor (BJT) manufactured by ROHM Semiconductor. It utilizes the HUML2020L3 leadless surface-mount package, also identified as DFN2020-3S, designed for efficient thermal and electrical conductivity. The device supports a maximum collector current of 2.5 A with a peak pulse current of 5 A. Key electrical ratings include a collector-emitter voltage of 120 V, a collector-base voltage of 120 V, and an emitter-base voltage of 6 V. The component features a power dissipation capacity of 1 W to 2.1 W, a gain-bandwidth product of 220 MHz, and a low collector-emitter saturation voltage of 200 mV at specified test conditions.

Single Bipolar Transistors Feature Summary

• Suitable for middle power driver applications requiring high reliability
• Low collector-emitter saturation voltage for improved efficiency
• High collector current capability with robust pulse handling
• Leadless small surface-mount package with excellent thermal performance

Single Bipolar Transistors Applications

• Middle power driver circuits
• General-purpose switching applications
• Amplifier stages in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with ROHM Semiconductor or authorized distributors before integration. Confirm that the HUML2020L3 package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the 1 W to 2.1 W power dissipation limits under actual operating conditions. Cross-reference the part number suffix to confirm tape-and-reel packaging specifications.

Single Bipolar Transistors Selection Notes

Select this component when a NPN BJT with 120 V blocking capability and 2.5 A continuous current is required in a compact form factor. The low saturation voltage makes it suitable for applications where minimizing conduction losses is critical. Consider the 220 MHz transition frequency for moderate-speed switching needs. Evaluate the exposed pad thermal design requirements inherent to the DFN2020-3S package to ensure adequate heat dissipation.

Single Bipolar Transistors Part Context

This transistor belongs to ROHM's series of small-signal and medium-power bipolar transistors designed for surface-mount technology. It shares the HUML2020L3 package family with complementary PNP devices like the 2SAR567F3TR, facilitating balanced push-pull configurations. The series emphasizes miniaturization while maintaining high thermal conductivity through leadless designs, targeting space-constrained modern electronic assemblies.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and absolute maximum ratings if considering alternative manufacturers' NPN transistors with similar 120 V and 2.5 A specifications.