2SCR586D3FRATL

Single Bipolar Transistors Overview

The 2SCR586D3FRATL is an NPN silicon power transistor manufactured by ROHM Semiconductor, designed for automotive applications under the AEC-Q101 qualification standard. It features a collector-emitter voltage (Vceo) of 80 V and a continuous collector current (Ic) of 5.0 A. The device offers a DC current gain (hFE) ranging from 120 to 390 at 500 mA and 3 V. With a maximum collector power dissipation of 10 W and a low saturation voltage (Vce(sat)) of 300 mV max at Ic/Ib = 2A/100mA, it is optimized for power driver circuits. The component is housed in a TO-252 (DPAK) surface-mount package.

Single Bipolar Transistors Feature Summary

• Automotive-grade reliability certified under AEC-Q101 standards for robust performance in vehicle environments.
• Low collector-emitter saturation voltage ensures efficient power handling with minimal heat generation during switching.
• High DC current gain provides effective amplification capabilities suitable for driving loads in power circuits.

Single Bipolar Transistors Applications

• Power driver circuits requiring high efficiency and thermal stability.
• Automotive electronic systems demanding AEC-Q101 qualified components.
• Low-frequency amplifier applications utilizing NPN bipolar junction transistor characteristics.

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix FRATL to confirm the tape-and-reel packaging format and quantity. Ensure the procurement channel sources genuine ROHM Semiconductor products to maintain AEC-Q101 automotive grade integrity. Check the latest supply status as manufacturing statuses may change, potentially affecting long-term availability for production lines.

Single Bipolar Transistors Selection Notes

Select this component when designing automotive power drivers that require an NPN transistor with 80V breakdown and 5A current capacity. Consider its low Vce(sat) for improved efficiency compared to standard transistors. Verify compatibility with the complementary PNP type 2SAR586D3FRA if push-pull configurations are needed. Ensure the TO-252 package fits the PCB layout constraints.

Single Bipolar Transistors Part Context

This part belongs to ROHM's series of low Vce(sat) power transistors specifically engineered for automotive use. It complements the PNP counterpart 2SAR586D3FRA, allowing for matched pairs in driver stages. The TO-252 package provides a balance between power dissipation capability and compact surface-mount footprint suitable for modern automotive electronics.

Single Bipolar Transistors Replacement Considerations

The document identifies 2SCR586D3TL1 as a similar level replacement within the same package family. Verify electrical parameter equivalence before substitution. No other direct cross-model substitutes are explicitly confirmed in the provided data.