Single Bipolar Transistors 2SCR586D3TL1 product image

2SCR586D3TL1

$1.32
  • Description:TRANS NPN 80V 5A TO-252
  • Series:-

SKU:92a6d576ecce Category: Brand:

  
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2SCR586D3TL1 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 80V 5A TO-252. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SCR586D3TL1

  • Description:TRANS NPN 80V 5A TO-252
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 100mA, 2A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 500mA, 3V
  • Power - Max:10 W
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SCR586D3TL1

2SCR586D3TL1

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SCR586D3TL1 is an NPN silicon epitaxial planar transistor housed in a TO-252 (DPAK) surface-mount package. It features a collector-emitter voltage of 80V and a continuous collector current of 5.0A with a power dissipation rating of 10W. The device offers a DC current gain (hFE) range of 120 to 390 at 500mA. Designed for low saturation voltage applications, it supports a maximum operating temperature of 150°C and complies with RoHS standards.

Single Bipolar Transistors Feature Summary

  • Low collector-emitter saturation voltage for efficient power driving
  • High thermal stability supporting operation up to 150°C
  • Surface-mount construction for automated assembly integration

Single Bipolar Transistors Applications

  • Power driver circuits
  • Low-frequency amplification stages
  • General-purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package dimensions and tape specifications. Confirm that the selected variant meets the required automotive or industrial qualification standards if applicable. Ensure compatibility with existing PCB footprints before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when high current handling and low saturation voltage are required in a compact surface-mount form factor. Compare hFE ranges and thermal resistance characteristics against alternative transistors to ensure adequate performance margins for the intended load conditions and ambient temperatures.

Single Bipolar Transistors Part Context

This part belongs to ROHM’s series of medium-power NPN transistors designed for robust performance in consumer and industrial electronics. It serves as a complementary counterpart to PNP variants within the same family, enabling push-pull configurations. The device utilizes silicon epitaxial planar technology for reliable switching and amplification capabilities.

Single Bipolar Transistors Replacement Considerations

The 2SCR586DGTLL is listed as a similar level replacement with the same package type. Verify electrical parameter equivalence and pinout compatibility before substituting.

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