Single Bipolar Transistors 2SCR586JFRGTLL product image

2SCR586JFRGTLL

$2.43
  • Description:TRANS NPN 80V 5A LPTL
  • Series:-

SKU:99321562c30a Category: Brand:

  
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2SCR586JFRGTLL is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 80V 5A LPTL. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SCR586JFRGTLL

  • Description:TRANS NPN 80V 5A LPTL
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 100mA, 2A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 500mA, 3V
  • Power - Max:40 W
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:LPTL
  • Grade:Automotive
  • Qualification:AEC-Q101

Single Bipolar Transistors datasheet and documents for 2SCR586JFRGTLL

2SCR586JFRGTLL

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SCR586JFRGTLL is an NPN silicon bipolar junction transistor (BJT) designed for power driver applications. It features a TO-263AB-3 surface-mount package with a maximum collector-emitter voltage of 80 V and a continuous collector current of 5 A. The device supports a power dissipation of 10 W, with a low collector-emitter saturation voltage of 300 mV at specified currents. It offers a DC current gain range of 120 to 390 and a transition frequency of 200 MHz. Qualified under AEC-Q101 standards, it operates within a temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • AEC-Q101 qualified for automotive reliability requirements
  • Low collector-emitter saturation voltage for efficient power driving
  • High DC current gain ensuring effective signal amplification
  • Surface-mount TO-263AB package for compact integration

Single Bipolar Transistors Applications

  • Automotive power driver circuits
  • Low-frequency amplification stages
  • General-purpose switching applications in automotive electronics

Single Bipolar Transistors Procurement Notes

Verify the specific suffix JFRGTLL against the manufacturer's official datasheet to confirm packaging details such as reel size or tape specifications. Ensure the component meets AEC-Q101 qualification requirements for your target application. Cross-reference the RoHS and REACH compliance status with the latest documentation from ROHM Semiconductor before procurement.

Single Bipolar Transistors Selection Notes

Select this component when an NPN BJT with 80 V breakdown and 5 A current capacity is required in a TO-263AB package. Consider its 10 W power dissipation capability and low saturation voltage for power management tasks. Verify that the 200 MHz transition frequency aligns with the operational speed needs of the circuit design.

Single Bipolar Transistors Part Context

This part belongs to the 2SCR series of NPN power transistors manufactured by ROHM Semiconductor. It is specifically engineered for automotive-grade applications, adhering to AEC-Q101 standards. The series includes complementary PNP types and variants with different package options like TO-252, providing flexibility for various power driver designs.

Single Bipolar Transistors Replacement Considerations

Check for direct substitutes within the same ROHM family, such as the 2SCR586D3FRA, which shares similar electrical characteristics but uses a TO-252 package. Verify pinout compatibility and thermal performance differences before substituting.

2SCR586JFRGTLL2SCR586JFRGTLL
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