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2SD0946B is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN DARL 80V 1A TO-126B-A1. Review the specifications below when checking this part for your BOM.
The Panasonic 2SD0946B is a silicon NPN epitaxial planar type Darlington transistor designed for low-frequency amplification. It features a high forward current transfer ratio (hFE) ranging from 4,000 to 40,000 depending on the rank classification. The device supports a collector current of 1 A and a peak collector current of 1.5 A. Key electrical ratings include a collector-emitter voltage (VCEO) of 80 V and a collector-base voltage (VCBO) of 100 V. It operates within a junction temperature range up to 150 °C and utilizes a TO-126B-A1 package.
Verify component status as maintenance or discontinued via official channels before design finalization. Confirm specific hFE rank requirements (Q, R, or S) during procurement to ensure performance alignment with circuit needs. Ensure compliance with RoHS directives applicable to the manufacturing region.
Select this component when high gain is required for driving loads such as motors or print mechanisms without additional shunt resistors. Consider the 80 V collector-emitter voltage rating for appropriate voltage headroom. Evaluate thermal management capabilities given the 1.2 W power dissipation limit at 25 °C ambient temperature.
This part belongs to the 2SD0946 series, which includes the 2SD0946A variant. Both are silicon NPN Darlington transistors intended for general-purpose low-frequency amplification tasks. The series is manufactured by Panasonic Electronic Components.
No public substitute part numbers are documented in the provided datasheet.
The maximum collector-emitter voltage (VCEO) for the 2SD0946B is 80 V.
The hFE is classified into ranks Q (4,000–10,000), R (8,000–20,000), and S (16,000–40,000).
The 2SD0946B uses the TO-126B-A1 package.
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