Single Bipolar Transistors 2SD0946B product image

2SD0946B

  • Description:TRANS NPN DARL 80V 1A TO-126B-A1
  • Series:-

SKU:308bae43d511 Category: Brand:

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2SD0946B is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN DARL 80V 1A TO-126B-A1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD0946B

  • Description:TRANS NPN DARL 80V 1A TO-126B-A1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Bulk
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:1.8V @ 1mA, 1A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:4000 @ 1A, 10V
  • Power - Max:1.2 W
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126B-A1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD0946B

2SD0946B

Single Bipolar Transistors Overview

The Panasonic 2SD0946B is a silicon NPN epitaxial planar type Darlington transistor designed for low-frequency amplification. It features a high forward current transfer ratio (hFE) ranging from 4,000 to 40,000 depending on the rank classification. The device supports a collector current of 1 A and a peak collector current of 1.5 A. Key electrical ratings include a collector-emitter voltage (VCEO) of 80 V and a collector-base voltage (VCBO) of 100 V. It operates within a junction temperature range up to 150 °C and utilizes a TO-126B-A1 package.

Single Bipolar Transistors Feature Summary

  • High forward current transfer ratio suitable for motor and printer hammer driver circuits
  • Eliminates the need for shunt resistors in driver designs
  • Silicon NPN epitaxial planar construction

Single Bipolar Transistors Applications

  • Motor driver circuits
  • Printer hammer driver circuits
  • Low-frequency amplification

Single Bipolar Transistors Procurement Notes

Verify component status as maintenance or discontinued via official channels before design finalization. Confirm specific hFE rank requirements (Q, R, or S) during procurement to ensure performance alignment with circuit needs. Ensure compliance with RoHS directives applicable to the manufacturing region.

Single Bipolar Transistors Selection Notes

Select this component when high gain is required for driving loads such as motors or print mechanisms without additional shunt resistors. Consider the 80 V collector-emitter voltage rating for appropriate voltage headroom. Evaluate thermal management capabilities given the 1.2 W power dissipation limit at 25 °C ambient temperature.

Single Bipolar Transistors Part Context

This part belongs to the 2SD0946 series, which includes the 2SD0946A variant. Both are silicon NPN Darlington transistors intended for general-purpose low-frequency amplification tasks. The series is manufactured by Panasonic Electronic Components.

Single Bipolar Transistors Replacement Considerations

No public substitute part numbers are documented in the provided datasheet.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the 2SD0946B?

The maximum collector-emitter voltage (VCEO) for the 2SD0946B is 80 V.

How is the forward current transfer ratio classified?

The hFE is classified into ranks Q (4,000–10,000), R (8,000–20,000), and S (16,000–40,000).

What package type does the 2SD0946B use?

The 2SD0946B uses the TO-126B-A1 package.

2SD0946B2SD0946B

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