Single Bipolar Transistors 2SD1012G-SPA product image

2SD1012G-SPA

$0.09
  • Description:TRANS NPN 15V 0.7A 3-SPA
  • Series:-

SKU:e23f900fb676 Category: Brand:

  
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2SD1012G-SPA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 15V 0.7A 3-SPA. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1012G-SPA

  • Description:TRANS NPN 15V 0.7A 3-SPA
  • Series:-
  • Mfr:onsemi
  • Package:Bulk,Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):700 mA
  • Voltage - Collector Emitter Breakdown (Max):15 V
  • Vce Saturation (Max) @ Ib, Ic:80mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:280 @ 50mA, 2V
  • Power - Max:250 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:3-SIP
  • Supplier Device Package:3-SPA

Single Bipolar Transistors datasheet and documents for 2SD1012G-SPA

2SD1012G-SPA

Single Bipolar Transistors Overview

The onsemi 2SD1012G-SPA is a discontinued NPN silicon small-signal bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector current of 700 mA and a collector-emitter breakdown voltage of 15 V. The device operates with a transition frequency of 250 MHz and a maximum power dissipation of 250 mW. It exhibits a minimum DC current gain (hFE) of 280 at 50 mA and 2 V, with a typical saturation voltage of 80 mV at 10 mA base and 100 mA collector currents. The component utilizes a 3-pin SPA through-hole package and supports a maximum junction temperature of 125°C.

Single Bipolar Transistors Feature Summary

  • NPN epitaxial planar silicon construction optimized for low-frequency power amplifier circuits
  • Integrated Zener diode structure between collector and base for enhanced stability
  • Low collector-to-emitter saturation voltage to minimize power loss during switching
  • High current capacity suitable for driving moderate loads in compact designs

Single Bipolar Transistors Applications

  • Low-frequency power amplifier stages
  • General-purpose high-speed inverters
  • Relay driver circuits
  • DC-DC converter output stages

Single Bipolar Transistors Procurement Notes

This part number is officially marked as obsolete and no longer manufactured by onsemi. Procurement must rely on secondary market distributors or surplus inventory holders. Verify the authenticity of the source and check for potential pinout or parameter variations in cross-referenced substitute components before integration into new designs.

Single Bipolar Transistors Selection Notes

Select this component only for legacy system maintenance or repair where original specifications are mandatory. For new designs, evaluate modern equivalents that offer improved availability and potentially higher performance metrics. Ensure the replacement matches the 3-pin SPA footprint and maintains compatible electrical characteristics for the specific circuit requirements.

Single Bipolar Transistors Part Context

The 2SD1012 series belongs to onsemi's portfolio of small-signal bipolar transistors historically used in consumer electronics and industrial control equipment. The SPA package provides a slim profile beneficial for space-constrained printed circuit board layouts. This specific variant represents an older generation of silicon NPN devices prior to recent packaging and material updates in the manufacturer's lineup.

Single Bipolar Transistors Replacement Considerations

The 15C02CH-TL-E from onsemi is documented as a similar alternative part number.

2SD1012G-SPA2SD1012G-SPA
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