2SD1048-7-TB-E

Single Bipolar Transistors Overview

The onsemi 2SD1048-7-TB-E is an NPN bipolar junction transistor designed for low-noise amplifier applications. It operates with a collector-emitter voltage of 10 V and supports a maximum continuous collector current of 70 mA. The device features a transition frequency of 4.5 GHz, enabling high-frequency performance. Power dissipation is rated at 200 mW, with a DC current gain minimum of 100 at 10 mA and 5 V. The noise figure is typically 1.9 dB at 1 GHz. It is housed in a surface-mount 3-CP package (TO-236-3/SC-59/SOT-23-3) and supports operating temperatures up to 150°C.

Single Bipolar Transistors Feature Summary

• Engineered for low-noise amplification in RF circuits
• Capable of operation at frequencies up to 4.5 GHz
• Optimized for high DC current gain stability

Single Bipolar Transistors Applications

• Low-noise RF amplifiers
• High-frequency signal processing stages
• Wireless communication transceivers

Single Bipolar Transistors Procurement Notes

Verify the specific suffix -7-TB-E against official datasheets to confirm pinout and tape-and-reel specifications. Ensure compatibility with SC-59/SOT-23-3 footprints during PCB layout. Confirm RoHS compliance status through manufacturer declarations prior to integration into regulated assemblies.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring low noise figures near 1.9 dB at 1 GHz. The 4.5 GHz transition frequency suits applications beyond standard audio or baseband frequencies. Verify that the 200 mW power dissipation rating aligns with thermal management capabilities in the target enclosure.

Single Bipolar Transistors Part Context

This part belongs to onsemi's discrete semiconductor product line, specifically within the RF Bipolar Transistors category. It serves as a specialized solution for high-frequency analog design, distinct from general-purpose switching transistors. The 3-CP packaging facilitates automated surface-mount assembly processes.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative NPN RF transistors with matching 4.5 GHz transition frequencies and compatible SOT-23-3 footprints if direct substitution is required.