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2SD1060R-1E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 5A TO-220-3. Review the specifications below when checking this part for your BOM.
The 2SD1060R-1E is an NPN silicon bipolar junction transistor manufactured by onsemi. It features a maximum DC collector current of 5 A and a collector-emitter voltage rating of 50 V. The device utilizes a TO-220AB-3 through-hole package with a power dissipation capacity of 1.75 W. Key electrical specifications include a collector-base voltage of 60 V, an emitter-base voltage of 6 V, and a saturation voltage of 300 mV. The gain-bandwidth product is 30 MHz, and the maximum operating temperature reaches +150 C.
Verify the specific suffix against official manufacturer documentation to confirm exact binning or testing criteria. Confirm RoHS compliance status via the latest datasheet revision. Ensure the ordering quantity aligns with factory tube packaging requirements. Cross-reference the component marking with the manufacturer's identification guide to prevent counterfeit substitution.
Select this component when a high-current NPN transistor is required in a through-hole configuration. Evaluate the thermal management needs relative to the 1.75 W dissipation limit. Compare the 50 V breakdown voltage against circuit peak voltages to ensure adequate safety margins. Consider the TO-220AB-3 footprint compatibility during PCB layout planning.
This part belongs to the 2SD1060 series of bipolar transistors designed for general-purpose power switching. The series emphasizes reliability in industrial and consumer electronics environments. The R-1E designation typically indicates specific manufacturing lot or testing parameters defined by onsemi standards.
Consult the official cross-reference list for verified substitutes. Verify pinout compatibility before substituting. Check that replacement parts meet or exceed the 5 A current and 50 V voltage ratings.
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