2SD1133C-E

Single Bipolar Transistors Overview

The Renesas Electronics Corporation 2SD1133C-E is a Silicon NPN Triple Diffused Power Transistor designed for high-power applications. It features a maximum collector current of 8A and a collector-emitter breakdown voltage of 50V. The device operates with a DC current gain (hFE) ranging from 60 to 120, depending on the specific grade. It utilizes a TO-220AB flange mount package, ensuring efficient thermal dissipation through the collector connection. The component supports a junction temperature up to 150°C and a storage temperature range from -55°C to +150°C. It is classified as a single configuration transistor suitable for low-frequency power amplification.

Single Bipolar Transistors Feature Summary

• High current handling capability with an 8A maximum collector current rating
• Robust thermal management via a metal flange mount package design
• Optimized for complementary pairing in low-frequency power amplifier circuits

Single Bipolar Transistors Applications

• Low frequency power amplifier complementary pairs
• General purpose power switching applications
• Industrial motor drive output stages

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status carefully, as historical data indicates non-compliance for standard variants. Confirm the specific suffix 'C-E' against the manufacturer's latest datasheet to ensure accurate pinout and electrical characteristics match your design requirements. Check for end-of-life or obsolescence notices before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring an NPN power transistor with moderate voltage ratings and high current capacity. Ensure the heat sink design accommodates the TO-220AB package's thermal resistance. Verify that the required hFE bin matches the application's biasing needs, as gain varies between grades.

Single Bipolar Transistors Part Context

This part belongs to Renesas' discrete power transistor portfolio, often utilized in conjunction with complementary PNP devices like the 2SB857. It serves as a core active element in linear and switching power stages where reliable high-current operation is critical. The triple diffused construction enhances reliability under high stress conditions.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Designers should consult the manufacturer for direct replacements or evaluate generic equivalents based on matching Vceo, Ic, and package constraints.