Single Bipolar Transistors 2SD11490RL product image

2SD11490RL

$0.04
  • Description:TRANS NPN 100V 0.02A MINI3-G1
  • Series:-

SKU:8f1e950baf6d Category: Brand:

  
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2SD11490RL is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN 100V 0.02A MINI3-G1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD11490RL

  • Description:TRANS NPN 100V 0.02A MINI3-G1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):20 mA
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:400 @ 2mA, 10V
  • Power - Max:200 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:Mini3-G1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD11490RL

2SD11490RL

Single Bipolar Transistors Overview

The Panasonic 2SD1149 is a silicon NPN epitaxial planar transistor designed for low-frequency amplification. It features a Mini3-G1 package with a collector-emitter voltage of 100 V and a continuous collector current of 20 mA. The device offers a high forward current transfer ratio (hFE) ranging from 400 to 1200, a transition frequency (fT) of 100 MHz, and a low collector-emitter saturation voltage of 0.20 V maximum.

Single Bipolar Transistors Feature Summary

  • High forward current transfer ratio
  • Low collector-emitter saturation voltage
  • High emitter-base voltage rating
  • Mini type package for downsizing

Single Bipolar Transistors Applications

  • Low-frequency amplification circuits
  • General electronic equipment
  • Office equipment
  • Communications equipment
  • Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (R or S) required for your circuit design, as the datasheet specifies distinct gain ranges. Confirm the component lifecycle status on the manufacturer's website, as this model may be subject to maintenance or discontinuation phases. Ensure compliance with RoHS directives if applicable to your manufacturing standards.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with high gain and low saturation voltage is needed for low-frequency applications. Consider the 20 mA continuous current limit and 200 mW power dissipation constraints. The Mini3-G1 package is suitable for automated insertion and space-constrained designs.

Single Bipolar Transistors Part Context

This part belongs to Panasonic's lineup of silicon NPN epitaxial planar transistors intended for general-purpose low-frequency amplification. It utilizes a Mini3-G1 surface-mount package to facilitate equipment miniaturization and automated assembly processes through tape and magazine packing methods.

Single Bipolar Transistors Replacement Considerations

Consult official documentation for verified substitutes. Cross-referencing requires matching the Mini3-G1 package, 100 V collector-emitter voltage, and comparable hFE and fT specifications.

Single Bipolar Transistors FAQ

What are the available hFE ranks for the 2SD1149?

The 2SD1149 is available in two hFE ranks: Rank R (400 to 800) and Rank S (600 to 1200).

What is the maximum collector-base voltage rating?

The maximum collector-base voltage (V_CBO) with the emitter open is rated at 100 V.

Does the 2SD1149 comply with environmental directives?

Yes, the product complies with the RoHS Directive (EU 2002/95/EC).

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