2SD11490SL

Single Bipolar Transistors Overview

The Panasonic 2SD1149 is a silicon NPN epitaxial planar transistor designed for low-frequency amplification. It features a Mini3-G1 package (EIAJ SC-59) with three pins. Key electrical ratings include a collector-base voltage of 100 V, a collector-emitter voltage of 100 V, and an emitter-base voltage of 15 V. The maximum continuous collector current is 20 mA, with a peak collector current of 50 mA. Collector power dissipation is rated at 200 mW. The device exhibits a forward current transfer ratio (hFE) ranging from 400 to 1200 depending on the rank, a transition frequency of 100 MHz, and a collector-emitter saturation voltage of 0.20 V maximum.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
• High emitter-base voltage VEBO
• Mini type package allowing downsizing and automatic insertion

Single Bipolar Transistors Applications

• Low-frequency amplification circuits
• General electronic equipment
• Household appliances
• Communications equipment

Single Bipolar Transistors Procurement Notes

Verify the specific product lifecycle status before procurement, as the datasheet indicates maintenance or discontinued classifications. Confirm that the Mini3-G1 package dimensions align with the target PCB footprint. Ensure the selected hFE rank meets the circuit requirements for forward current transfer ratio. Check for RoHS compliance documentation if required by local regulations.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high gain in a compact surface-mount form factor. The 100 V breakdown voltage provides adequate headroom for low-voltage signal processing. Consider the thermal constraints due to the 200 mW power dissipation limit. Verify that the operating temperature range fits within the specified junction and storage limits.

Single Bipolar Transistors Part Context

The 2SD1149 belongs to Panasonic's lineup of small-signal bipolar transistors intended for general-purpose use. It utilizes an epitaxial planar process to achieve stable performance characteristics. The device is housed in a plastic epoxy package designed for automated assembly processes, supporting efficient manufacturing integration.

Single Bipolar Transistors Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-referencing should be performed based on pinout compatibility, voltage ratings, and current capabilities.