2SD1190

Single Bipolar Transistors Overview

The onsemi 2SD1190 is a silicon NPN Darlington power transistor designed for high-gain driver applications. It features a single-element configuration with a maximum collector current of 7 A and a collector-emitter voltage rating of 60 V. The device utilizes a TO-220AB flange mount package, providing robust thermal management capabilities. Key electrical characteristics include a minimum DC current gain (hFE) of 2000 and a built-in bias resistor ratio of 0.03. It operates at a maximum junction temperature of 150 °C and is constructed using plastic/epoxy materials for the encapsulation.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio suitable for motor and printer hammer driver circuits
• Integrated shunt resistor eliminates external biasing components
• Robust flange mount package for efficient heat dissipation

Single Bipolar Transistors Applications

• Motor driver circuits
• Printer hammer drivers
• Low-frequency amplification stages

Single Bipolar Transistors Procurement Notes

Verify the manufacturer designation carefully, as the 2SD1190 part number originates from Sanyo Semicon Device and may be distributed by various entities including onsemi following industry consolidations. Confirm the specific ordering suffix matches the required package variant and RoHS compliance status. Cross-reference the datasheet revision date to ensure alignment with current manufacturing specifications and pinout configurations before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and integrated biasing are required for driving inductive loads. The TO-220AB package facilitates direct mounting to heatsinks for thermal regulation. Ensure the application voltage remains within the 60 V collector-emitter limit. Consider the 7 A continuous current rating against peak load requirements. Verify that the built-in resistor ratio meets the specific drive circuit design constraints.

Single Bipolar Transistors Part Context

The 2SD1190 belongs to the class of silicon NPN epitaxial planar type Darlington transistors. These devices are engineered for power switching and amplification tasks where high input impedance and substantial output current capability are necessary. The Darlington configuration provides significant current amplification, simplifying the control circuitry design for heavy-duty applications such as industrial motors and printing mechanisms.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers: 2SD1191, 2SD1198.