Single Bipolar Transistors 2SD11990S product image

2SD11990S

  • Description:TRANS NPN 40V 0.05A M-A1
  • Series:-

SKU:437bae1c9bda Category: Brand:

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2SD11990S is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN 40V 0.05A M-A1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD11990S

  • Description:TRANS NPN 40V 0.05A M-A1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):50 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:600 @ 2mA, 10V
  • Power - Max:400 mW
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:3-SIP
  • Supplier Device Package:M-A1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD11990S

2SD11990S

Single Bipolar Transistors Overview

The Panasonic 2SD1199 is a silicon NPN epitaxial planar transistor designed for low-frequency amplification. It features a high forward current transfer ratio (hFE) and low collector-to-emitter saturation voltage. The device supports a maximum collector current of 50 mA and a collector power dissipation of 400 mW at 25°C ambient temperature. It operates within a junction temperature range of -55°C to +150°C and utilizes an M-A1 package.

Single Bipolar Transistors Feature Summary

  • High forward current transfer ratio
  • Low collector to emitter saturation voltage
  • High emitter to base voltage
  • Low noise voltage

Single Bipolar Transistors Applications

  • Low-frequency amplification
  • General electronic equipment
  • Office equipment
  • Communications equipment
  • Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the current lifecycle status before procurement, as this component may be classified under maintenance or discontinued stages. Consult official Panasonic channels for the most up-to-date Product Standards and availability information. Ensure compliance with export control laws if applicable. Confirm that the specific application aligns with standard usage guidelines rather than specialized safety-critical environments.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring low-frequency amplification with minimal noise characteristics. Consider the M-A1 package for ease of automatic and manual insertion. Evaluate the thermal environment against the 400 mW dissipation limit. Verify that the required hFE rank meets the circuit's gain specifications.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SD series of silicon NPN transistors. It is specifically engineered for general-purpose low-frequency amplification tasks. The M-A1 package facilitates flexible mounting options on printed circuit boards.

Single Bipolar Transistors Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-referencing with other manufacturers requires careful validation of electrical parameters and physical dimensions.

Single Bipolar Transistors FAQ

What is the maximum collector current rating?

The maximum continuous collector current (IC) is rated at 50 mA.

Does the device support high-voltage switching?

No, it is designed for low-frequency amplification with a maximum collector-emitter voltage of 40 V.

What is the typical transition frequency?

The transition frequency (fT) is typically 120 MHz under specified test conditions.

2SD11990S2SD11990S

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