Single Bipolar Transistors 2SD1207S-AE product image

2SD1207S-AE

$0.16
  • Description:TRANS NPN 50V 2A 3-MP
  • Series:-

SKU:e3a068709b90 Category: Brand:

  
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2SD1207S-AE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 2A 3-MP. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1207S-AE

  • Description:TRANS NPN 50V 2A 3-MP
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 2V
  • Power - Max:1 W
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:3-MP

Single Bipolar Transistors datasheet and documents for 2SD1207S-AE

2SD1207S-AE

Single Bipolar Transistors Overview

The 2SD1207S-AE is an NPN single bipolar transistor manufactured by onsemi, designed for large-current switching applications. It features a collector-to-emitter voltage rating of 50 V and a continuous collector current capacity of 2 A, with a peak pulse current of 4 A. The device operates within a junction temperature range of -55 °C to +150 °C and dissipates up to 1 W of power. Key electrical characteristics include a DC current gain (hFE) ranging from 140 to 400 at 100 mA, a low collector-to-emitter saturation voltage of 0.15 V to 0.4 V at 1 A, and a gain-bandwidth product of 150 MHz.

Single Bipolar Transistors Feature Summary

  • Utilizes FBET and MBIT processing technologies
  • Provides low collector-to-emitter saturation voltage
  • Supports large current capacity and wide Safe Operating Area

Single Bipolar Transistors Applications

  • Power supplies
  • Relay drivers
  • Lamp drivers
  • Automotive wiring

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The 2SD1207S-AE variant is supplied in boxes containing 1,000 pieces per box, whereas other variants like the 2SD1207S are packaged in bags of 500 pieces. Ensure the selected part number matches the required quantity format for your assembly process.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring robust NPN switching capabilities with high current handling. The wide Safe Operating Area and low saturation voltage make it suitable for efficient power management. Validate that the required hFE rank aligns with circuit design specifications, as the device is graded based on DC current gain performance at 100 mA.

Single Bipolar Transistors Part Context

This device belongs to the 2SD1207 series of NPN single transistors produced by onsemi. It is housed in the MP package, which corresponds to JEITA/JEDEC standards SC-51, TO-92(1-WATT), or TO-226AE. The unit weighs approximately 0.578 grams and is lead-free compliant.

Single Bipolar Transistors Replacement Considerations

The 2SD1207T serves as a direct functional substitute within the same series. Both devices share identical electrical ratings and package dimensions, differing primarily in their shipping packaging configurations.

Single Bipolar Transistors FAQ

What is the maximum collector current rating?

The absolute maximum continuous collector current is rated at 2 A.

How is the DC current gain graded?

The device is graded into Rank S (140 to 280) and Rank T (200 to 400) based on hFE measured at VCE=2V and IC=100mA.

What is the typical collector-to-emitter saturation voltage?

At a collector current of 1 A and base current of 50 mA, the saturation voltage ranges from 0.15 V to 0.4 V.

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