2SD12110R

Single Bipolar Transistors Overview

The Panasonic 2SD12110R is a silicon NPN epitaxial planar transistor designed for low-frequency amplification. It features a collector-emitter voltage of 120 V and a continuous collector current rating of 0.5 A, with a peak collector current capability of 1 A. The device offers a forward current transfer ratio ranging from 130 to 330 depending on the specific rank classification. It operates within a junction temperature range up to 150 °C and utilizes a TO-92L-A1 package.

Single Bipolar Transistors Feature Summary

• High collector-emitter voltage rating suitable for driver-stage applications
• Optimized performance for low-frequency power amplifier stages
• High forward current transfer ratio across specified operating conditions

Single Bipolar Transistors Applications

• Driver stage for low-frequency audio amplifiers
• Low-frequency power amplifier circuits (40 W to 60 W output)
• General-purpose low-frequency amplification in electronic equipment

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific ordering suffix matches the required hFE rank classification. Ensure compliance with RoHS directives as stated in the official documentation. Review the manufacturer's lifecycle status page for any maintenance or discontinuation updates prior to finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when designing low-frequency amplification circuits requiring high voltage tolerance and moderate current handling capabilities. Consider the specific hFE rank requirements based on the target gain specifications of the amplifier design. Evaluate thermal management strategies to ensure the junction temperature remains within the 150 °C limit during operation.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic 2SD1211 series of silicon NPN transistors. It is specifically engineered for robust performance in audio and general-purpose low-frequency amplification tasks. The device provides a reliable solution for driving power stages in consumer electronics and standard industrial equipment applications.

Single Bipolar Transistors Replacement Considerations

Consult the official Panasonic semiconductor database for verified substitute part numbers. Cross-reference electrical parameters such as VCEO, IC, and hFE ranks to ensure functional compatibility. Verify package dimensions and pinout configurations before implementing any alternative components in existing designs.