2SD1221-Y(Q)

Single Bipolar Transistors Overview

The Toshiba 2SD1221 is a silicon NPN diffused transistor utilizing the PCT process, designed for audio frequency power amplifier applications. It features a low collector saturation voltage of 0.4 V typical at IC = 3 A and IB = 0.3 A, alongside high power dissipation capability of 20 W at Tc = 25°C. The device operates with a maximum collector-emitter voltage of 60 V and a collector current of 3 A. It is packaged in a 2-7J1A small outline format.

Single Bipolar Transistors Feature Summary

• Low collector saturation voltage for efficient switching
• High power dissipation capability up to 20 W
• Complementary pairing available with 2SB906

Single Bipolar Transistors Applications

• Audio frequency power amplifiers

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate specific lot codes for compliance. Confirm environmental restrictions and intended use limitations against the Toshiba Semiconductor Reliability Handbook before integration into final designs.

Single Bipolar Transistors Selection Notes

Select this component for general electronics applications requiring robust NPN switching or amplification. Ensure thermal management aligns with the specified safe operating area curves. Verify that hFE classification matches circuit requirements, noting the Y grade range.

Single Bipolar Transistors Part Context

This part belongs to the family of bipolar junction transistors manufactured by Toshiba Semiconductor and Storage. It serves as a discrete semiconductor solution for power handling tasks within consumer and industrial electronic equipment, distinct from integrated circuits or field-effect devices.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SB906 as the complementary PNP counterpart. No other direct substitute part numbers are documented in the provided source material.