2SD1247S-AE

Single Bipolar Transistors Overview

The Sanyo 2SD1247S-AE is an NPN silicon small signal transistor housed in a SC-51 package. It supports a maximum collector current of 2.5 A and a collector-emitter voltage of 25 V. The device features a minimum DC current gain (hFE) of 200, operates up to a maximum junction temperature of 150 °C, and has a power dissipation rating of 1 W.

Single Bipolar Transistors Feature Summary

• Designed for high-speed switching applications
• Utilizes a cylindrical through-hole SC-51 package
• Constructed from silicon material

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Low-voltage amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'AE' against official Sanyo documentation to confirm any distinct manufacturing or compliance variations compared to the standard 2SD1247T variant. Ensure the SC-51 package dimensions align with the target PCB layout requirements before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with a 2.5 A continuous current capability is required. The low voltage rating of 25 V limits suitability to low-power logic or signal processing environments rather than high-voltage power control systems.

Single Bipolar Transistors Part Context

This part belongs to the Sanyo discrete semiconductor transistor family. It serves as a small-signal alternative to higher-power devices like the 2SD1685E, offering a smaller form factor suitable for space-constrained designs requiring moderate current handling.

Single Bipolar Transistors Replacement Considerations

The 2SD1247T is a confirmed substitute within the same series. Verify pinout compatibility and thermal characteristics when swapping between these variants.