2SD1266AP

Single Bipolar Transistors Overview

The Panasonic 2SD1266AP is a silicon NPN triple diffusion planar power transistor designed for power amplification. It operates with a collector current of 3A and peak current of 5A. The device features high forward current transfer ratio (hFE) with satisfactory linearity and low collector-emitter saturation voltage. Electrical ratings include a collector-base voltage of 60V, collector-emitter voltage of 60V, and emitter-base voltage of 6V. Collector power dissipation reaches 35W at 25°C case temperature. Transition frequency is 30MHz. The component utilizes an EIAJ SC-67 package, equivalent to TO-220F-A1, allowing installation to a heat sink with one screw.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio hFE which has satisfactory linearity
• Low collector-emitter saturation voltage VCE(sat)
• Full-pack package which can be installed to the heat sink with one screw

Single Bipolar Transistors Applications

• Standard applications or general electronic equipment such as office equipment
• Communications equipment
• Measuring instruments
• Household appliances

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'P' against the official Panasonic datasheet to confirm if it denotes a specific binning or packaging variation. Confirm the product lifecycle status on the manufacturer website, as maintenance or discontinuation notices may apply. Ensure compliance with RoHS Directive requirements during procurement. Consult sales staff for special application suitability before purchasing.

Single Bipolar Transistors Selection Notes

Select this component for standard power amplification tasks requiring moderate current handling up to 3A. Consider the thermal resistance characteristics when designing heat sinking solutions. Verify that the 60V collector-emitter voltage rating meets the circuit requirements. Evaluate the transition frequency of 30MHz against signal bandwidth needs. Ensure the TO-220F-A1 package fits the mechanical constraints of the target enclosure.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SD1266 series of silicon NPN transistors. It is manufactured using triple diffusion planar technology. The series includes variants like the 2SD1266A with higher voltage ratings. These components are positioned within Panasonic's discrete semiconductor portfolio for general-purpose power amplification.

Single Bipolar Transistors Replacement Considerations

Consult the official Panasonic replacement guide for verified substitutes. Cross-reference electrical parameters such as VCEO, IC, and package type when evaluating alternatives.