2SD12670P

Single Bipolar Transistors Overview

The Panasonic 2SD12670P is a silicon NPN triple diffusion planar power transistor designed for power amplification. It features high forward current transfer ratio with satisfactory linearity and low collector-emitter saturation voltage. The device supports a maximum collector current of 4A, peak current of 8A, and power dissipation of 40W at 25°C. Voltage ratings include 60V VCEO for the standard variant and 80V for the 'A' suffix version. Transition frequency is 20MHz.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio (hFE) with satisfactory linearity
• Low collector-emitter saturation voltage (VCE(sat))
• Full-pack package design allowing heat sink installation with one screw

Single Bipolar Transistors Applications

• Power amplification circuits
• General electronic equipment
• Office equipment
• Communications equipment
• Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the specific voltage rating required for your application, as the datasheet distinguishes between the 2SD1267 (60V) and 2SD1267A (80V) variants. Confirm the hFE rank (R, Q, or P) if gain linearity is critical to the circuit design. Check the latest product status on the manufacturer's website, as this component may be subject to maintenance or discontinuation plans.

Single Bipolar Transistors Selection Notes

Select the 2SD1267A variant if the circuit requires a collector-emitter voltage rating of 80V instead of 60V. Ensure the thermal management strategy accounts for the 40W dissipation limit at 25°C case temperature. Consider the transition frequency of 20MHz when designing for higher frequency applications. Verify that the TO-220F-A1 package fits the mechanical constraints of the heat sink mounting point.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic 2SD1267 series of silicon NPN power transistors. It is specifically engineered for power amplification tasks. The device utilizes triple diffusion planar technology to achieve its electrical characteristics. It is complementary to the 2SB0942 and 2SB0942A PNP transistors, facilitating push-pull amplifier designs.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.