2SD1275AP

Single Bipolar Transistors Overview

The Panasonic 2SD1275AP is a silicon NPN triple diffusion planar type Darlington power transistor designed for power amplification. It operates with a collector current of 2A and peak current of 4A. The device features a collector-emitter voltage rating of 60V for the standard variant and 80V for the A variant. Electrical characteristics include a forward current transfer ratio (hFE) ranging from 1,000 to 10,000 depending on the rank classification. Transition frequency is specified at 20MHz. The component utilizes a TO-220F-A1 full-pack package, allowing direct installation to a heat sink with a single screw.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio hFE
• High-speed switching capability
• Full-pack package enabling one-screw heat sink installation

Single Bipolar Transistors Applications

• Power amplification circuits
• Switching regulators
• PWM inverters
• Solenoid drivers
• Relay drivers

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official documentation to confirm exact electrical parameters, as variants exist. Confirm RoHS compliance status for the specific manufacturing batch. Check the manufacturer's website for current lifecycle stage information, as maintenance or discontinuation plans may affect long-term availability.

Single Bipolar Transistors Selection Notes

Select based on required collector-emitter voltage tolerance; use the 2SD1275A variant if the circuit requires an 80V rating instead of 60V. Ensure the thermal management design accommodates the 35W dissipation rating when mounted on an appropriate heat sink. Verify that the Darlington configuration's saturation voltage meets the efficiency requirements of the load application.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic 2SD1275 series of silicon NPN Darlington transistors. It is functionally complementary to the PNP types 2SB0949 and 2SB0949A. The series is engineered for applications requiring high gain and moderate speed switching within a robust TO-220F-A1 package suitable for flange mounting.

Single Bipolar Transistors Replacement Considerations

Official complementary parts are the 2SB0949 and 2SB0949A PNP transistors. Cross-manufacturer replacements require matching the Darlington topology, 2A continuous current rating, and TO-220F-A1 package dimensions.

Single Bipolar Transistors FAQ

What is the difference between the 2SD1275 and 2SD1275A?

The primary difference is the voltage rating. The 2SD1275 has a collector-base and collector-emitter voltage rating of 60V, while the 2SD1275A is rated for 80V.

How is the hFE rank classified?

The forward current transfer ratio hFE2 is classified into ranks: Rank R (1,000 to 2,500), Rank Q (2,000 to 5,000), and Rank P (4,000 to 10,000).

What is the maximum collector power dissipation?

The maximum collector power dissipation is 35W when the case temperature is maintained at 25°C.