2SD13280SL

Single Bipolar Transistors Overview

The Panasonic 2SD13280SL is a silicon NPN epitaxial planar transistor in an EIAJ SC-59 Mini3-G1 package. It supports a collector current of 0.5 A and peak current of 1 A, with maximum voltages of 20 V (VCEO) and 25 V (VCBO). Key electrical parameters include a forward current transfer ratio (hFE) ranging from 200 to 800, a collector-emitter saturation voltage of 0.40 V max at 0.5 A, and a transition frequency of 200 MHz. The device dissipates up to 200 mW and operates within a junction temperature range of -55 °C to +150 °C.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching
• Low ON resistance to minimize power loss
• High forward current transfer ratio for effective amplification

Single Bipolar Transistors Applications

• Low-voltage output amplification
• Muting circuits
• DC-DC converters

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact binning or packaging specifications. Confirm compliance status and lifecycle stage via manufacturer resources before procurement. Ensure design parameters remain within absolute maximum ratings to prevent failure.

Single Bipolar Transistors Selection Notes

Select this component for low-voltage applications requiring high gain and low saturation voltage. Evaluate thermal management requirements as the device has a 200 mW dissipation limit. Consider the SC-59 package dimensions for PCB layout constraints.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SD1328 series of small-signal NPN transistors. It is designed for general-purpose use in consumer electronics and industrial equipment where compact size and reliable performance are required.

Single Bipolar Transistors Replacement Considerations

Consult official substitution lists for verified equivalents. Generic replacements may differ in hFE ranges or saturation characteristics.