2SD1436K-E

Single Bipolar Transistors Overview

The 2SD1436K-E is a single NPN Darlington bipolar junction transistor manufactured by Renesas Electronics Corporation. Designed for through-hole mounting, it utilizes the TO-3P (SC-65) package configuration. The component features a maximum collector-emitter voltage rating of 120 V and supports a continuous collector current of 10 A. It offers a high power dissipation capacity of 80 W, making it suitable for robust switching and amplification applications requiring significant current handling capabilities within its specified thermal limits.

Single Bipolar Transistors Feature Summary

• Darlington configuration providing high current gain
• High power dissipation capability for demanding loads
• Through-hole mounting for mechanical stability

Single Bipolar Transistors Applications

• High-power audio amplifier output stages
• Industrial motor control circuits
• Power supply regulation systems

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer datasheet to confirm electrical characteristics and thermal resistance values prior to integration. Ensure that the procurement source provides authentic components from Renesas Electronics Corporation or authorized distributors. Confirm compliance with relevant environmental standards and verify that the TO-3P package dimensions match the target PCB layout requirements for proper installation.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and substantial power handling are required in a through-hole format. The Darlington structure simplifies drive circuitry by reducing base current requirements compared to standard BJTs. Evaluate thermal management needs carefully due to the 80 W dissipation rating, ensuring adequate heatsinking is available to maintain junction temperatures within safe operating limits during peak load conditions.

Single Bipolar Transistors Part Context

This device belongs to the family of power bipolar transistors offered by Renesas Electronics Corporation. It serves as a discrete semiconductor solution for power electronics, distinct from integrated circuits or microcontrollers. The TO-3P package provides a robust metal tab for efficient heat transfer to external cooling structures, distinguishing it from smaller surface-mount alternatives.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference documentation for verified substitute part numbers. Ensure any replacement maintains equivalent voltage, current, and power ratings while matching the physical package footprint for direct interchangeability without modifying the existing circuit board design.