Single Bipolar Transistors 2SD145000A product image

2SD145000A

$0.08
  • Description:TRANS NPN 20V 0.5A NS-B1
  • Series:-

SKU:34dc998e2486 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

2SD145000A is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN 20V 0.5A NS-B1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD145000A

  • Description:TRANS NPN 20V 0.5A NS-B1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 20mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 500mA, 2V
  • Power - Max:300 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:3-SIP
  • Supplier Device Package:NS-B1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD145000A

2SD145000A

Single Bipolar Transistors Overview

The Panasonic 2SD1450 is a silicon NPN epitaxial planar transistor designed for low-frequency amplification. It features an NS-B1 package with radial taping supply, optimized for high-density mounting. Key electrical parameters include a collector-emitter voltage of 20 V, a collector current of 0.5 A, and a peak collector current of 1 A. The device exhibits a forward current transfer ratio (hFE) ranging from 200 to 800 depending on the rank, and a transition frequency of 200 MHz.

Single Bipolar Transistors Feature Summary

  • Optimized for high-density mounting applications
  • Low collector-emitter saturation voltage characteristics
  • Radial taping supply configuration

Single Bipolar Transistors Applications

  • Low-frequency amplification circuits
  • General electronic equipment
  • Office equipment
  • Communications equipment
  • Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank required for your application, as the datasheet defines distinct ranges (R, S, T). Confirm that the component meets standard application requirements, as it is not qualified for aerospace or life support systems. Check the manufacturer's official website for the most current maintenance or discontinuation status before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when low-frequency amplification is required in space-constrained designs due to its high-density mounting capability. Ensure the design accommodates the 300 mW power dissipation limit at 25°C ambient temperature. Consider the available hFE ranks to match circuit gain requirements without excessive base drive current.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic discrete semiconductor transistor family. It utilizes a silicon NPN epitaxial planar structure housed in an NS-B1 package. The product complies with the RoHS Directive (EU 2002/95/EC), indicating adherence to specific environmental standards for restricted hazardous substances in electrical and electronic equipment.

Single Bipolar Transistors Replacement Considerations

Consult the manufacturer's official documentation for verified substitute part numbers. Cross-reference absolute maximum ratings and pin configurations carefully if considering alternatives from other manufacturers.

2SD145000A2SD145000A
$0.08
Buy Now