2SD1484KT146R

Single Bipolar Transistors Overview

The 2SD1484KT146R is a silicon NPN medium power transistor manufactured by Rohm Semiconductor. It operates with a collector-emitter voltage of 50V and supports a continuous collector current of 0.5A. The device features a low saturation voltage, typically 0.1V at IC/IB=150mA/15mA. It is housed in an SOT-23 plastic package suitable for surface mount applications.

Single Bipolar Transistors Feature Summary

• High current capability supporting up to 0.5A collector current
• Low saturation voltage for efficient switching performance
• Designed for medium power transistor applications

Single Bipolar Transistors Applications

• General purpose switching circuits
• Medium power amplification stages
• Surface mount assembly designs

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet version and RoHS compliance status directly from the manufacturer before integration. Confirm that the SOT-23 package dimensions match your PCB footprint requirements. Ensure thermal management strategies align with the device's power dissipation limits under expected operating conditions.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with 50V breakdown and 0.5A current handling is required. The low saturation voltage makes it suitable for applications where minimizing voltage drop during conduction is critical. Consider the SOT-23 package size constraints relative to available board space.

Single Bipolar Transistors Part Context

This part belongs to Rohm's lineup of silicon NPN transistors designed for general-purpose use. It serves as a medium power solution bridging small-signal devices and higher-power alternatives. The KT146R suffix indicates the specific tape and reel packaging configuration used for automated assembly processes.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other 50V, 0.5A NPN transistors in SOT-23 packages. Verify pinout compatibility and electrical parameter overlaps such as hFE ranges and saturation voltages before substituting.