2SD14990P

Single Bipolar Transistors Overview

The Panasonic 2SD1499P is a silicon NPN triple diffusion planar type power transistor designed for high power amplification. It features a TO-220F-A1 package compatible with heat sinks via a single screw. Key electrical parameters include a collector-emitter voltage of 100 V, a continuous collector current of 5 A, and a peak collector current of 8 A. The device offers a maximum collector power dissipation of 40 W at 25°C case temperature. It exhibits an extremely satisfactory linearity in the forward current transfer ratio (hFE) and a wide safe operation area.

Single Bipolar Transistors Feature Summary

• Extremely satisfactory linearity of the forward current transfer ratio hFE
• Wide safe operation area
• High transition frequency fT
• Full-pack package which can be installed to the heat sink with one screw

Single Bipolar Transistors Applications

• High power amplification circuits
• General electronic equipment
• Office equipment
• Communications equipment
• Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the specific product lifecycle status before procurement, as this component may fall under maintenance or discontinued categories. Consult official Panasonic Industry channels for the most up-to-date Product Standards and availability information. Ensure that the selected part satisfies the latest specifications required for your design application prior to purchasing.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high power amplification with good linearity. Consider the complementary 2SB1063 PNP transistor for push-pull configurations. Evaluate thermal management requirements carefully, as the 40 W dissipation rating depends on the case temperature being maintained at 25°C using an appropriate heat sink.

Single Bipolar Transistors Part Context

This component belongs to the category of silicon NPN power transistors manufactured by Panasonic Electronic Components. It is specifically engineered for high power amplification tasks within standard electronic systems. The device utilizes a triple diffusion planar technology to achieve its performance characteristics and reliability standards defined in the official datasheet.

Single Bipolar Transistors Replacement Considerations

The 2SB1063 is documented as the complementary PNP transistor for this series. For direct replacements, consult official cross-reference tools provided by Panasonic Industry, ensuring the substitute meets the same voltage, current, and package specifications.