2SD15110RL

Single Bipolar Transistors Overview

The Panasonic 2SD1511 is a silicon NPN epitaxial planar type Darlington transistor designed for low-frequency output amplification. It features a MiniP3-F1 package and supports a collector current of 1 A with a peak rating of 1.5 A. The device offers a high forward current transfer ratio (hFE) ranging from 4,000 to 40,000 depending on the rank. Key electrical parameters include a collector-emitter voltage (VCEO) of 80 V, a collector-base voltage (VCBO) of 100 V, and a transition frequency (fT) of 150 MHz.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio suitable for driver circuits
• Mini power type package enabling equipment downsizing
• Supports automatic insertion via tape or magazine packing

Single Bipolar Transistors Applications

• Motor driver circuits
• Printer hammer driver circuits

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (Q, R, or S) required for the application design. Confirm the component lifecycle status as maintenance or discontinued information may vary. Ensure the ordering suffix matches the desired packaging format. Validate RoHS compliance requirements against the latest manufacturer standards before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when high gain is necessary to simplify driver circuitry by omitting shunt resistors. Consider the MiniP3-F1 package dimensions for board layout constraints. Evaluate the thermal dissipation capabilities relative to the expected ambient temperature and copper foil area specifications.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SD1511 series of Darlington transistors. It is characterized by its high current gain and compact form factor, distinguishing it from standard bipolar transistors in applications requiring significant amplification within limited space.

Single Bipolar Transistors Replacement Considerations

Consult official replacement lists for equivalent Darlington configurations. Verify pinout compatibility and package dimensions if substituting with other manufacturers' components.

Single Bipolar Transistors FAQ

What are the available hFE ranks for the 2SD1511?

The device is classified into three ranks: Rank Q (4,000 to 10,000), Rank R (8,000 to 20,000), and Rank S (16,000 to 40,000).

What is the maximum collector power dissipation?

The maximum collector power dissipation is 1 W at an ambient temperature of 25°C.

How does the package support automated manufacturing?

The MiniP3-F1 package allows for automatic insertion through tape packing and magazine packing methods.