2SD1535

Single Bipolar Transistors Overview

The Panasonic 2SD1535 is a silicon NPN triple diffusion planar type Darlington power transistor designed for high power amplification. It features a TO-220F-A1 package with a collector-base voltage of 500 V and a collector-emitter voltage of 400 V. The device supports a continuous collector current of 7 A and a peak collector current of 14 A, with a maximum collector power dissipation of 50 W at 25°C. Key electrical characteristics include a minimum forward current transfer ratio (hFE) of 200 at 6 A and a transition frequency of 20 MHz.

Single Bipolar Transistors Feature Summary

• High collector-base voltage capability
• Wide safe operation area
• Full-pack package design for easy heat sink installation

Single Bipolar Transistors Applications

• High power amplification circuits

Single Bipolar Transistors Procurement Notes

Verify the current lifecycle status on the official Panasonic Semiconductor website before procurement, as this component may be subject to maintenance or discontinuation plans. Confirm that the specific package variant matches the required thermal and mechanical constraints for the target application.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high voltage handling and substantial current gain in a single package. Ensure the design accounts for the specified junction temperature limits and utilizes appropriate heat sinking to maintain performance within the guaranteed operating conditions.

Single Bipolar Transistors Part Context

This component belongs to the category of silicon NPN power transistors utilizing triple diffusion planar technology. It is specifically engineered as a Darlington configuration to provide high current gain, making it suitable for demanding power amplification tasks where standard transistors might lack sufficient drive capability.

Single Bipolar Transistors Replacement Considerations

Consult official documentation for verified substitute part numbers.