2SD1618T-TD-E

Single Bipolar Transistors Overview

The onsemi 2SD1618T-TD-E is a single NPN silicon bipolar junction transistor designed for surface-mount applications. It features a maximum DC collector current of 0.7 A and a collector-emitter breakdown voltage (VCEO) of 15 V. The device operates with a collector-base voltage (VCBO) of 30 V and an emitter-base voltage (VEBO) of 6 V. Key electrical characteristics include a collector-emitter saturation voltage of 300 mV at specified currents, a power dissipation rating of 1.3 W, and a transition frequency (fT) of 150 MHz. The component supports a maximum operating temperature of +150 °C and is housed in a PCP package.

Single Bipolar Transistors Feature Summary

• High-speed switching capability suitable for general-purpose applications
• Low collector-emitter saturation voltage for efficient power handling
• Ultrasmall PCP package design facilitating high-density circuit integration

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Inverter driver stages
• Audio output stages in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'TD-E' against the manufacturer's latest datasheet to confirm tape-and-reel packaging specifications and RoHS compliance status. Ensure the ordering quantity aligns with the minimum reel size requirements defined by onsemi. Cross-reference the part number with authorized distributors to validate authenticity and traceability before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with moderate current handling and fast switching speeds is required. The low saturation voltage makes it suitable for applications where power efficiency in the on-state is critical. Consider the thermal management capabilities provided by the PCP package and the 1.3 W power dissipation limit during PCB layout planning.

Single Bipolar Transistors Part Context

This component belongs to the 2SD1618 series of small-signal bipolar transistors manufactured by onsemi. The series utilizes FBET and MBIT processes to achieve high breakdown voltage and large current capacity within an ultrasmall footprint. These transistors are engineered to support high-density hybrid IC designs and are commonly integrated into audio and power conversion systems.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers for 2SD1618T-TD-E were not identified in the available documentation.