2SD1624T-TD-H

Single Bipolar Transistors Overview

The onsemi 2SD1624T-TD-H is an NPN silicon bipolar junction transistor housed in a PCP (SOT-89/TO-243) surface-mount package. It supports a maximum collector current of 3 A and a collector-emitter voltage of 50 V, with a pulse rating of 6 A. The device features a gain-bandwidth product of 150 MHz and a DC current gain ranging from 100 to 560 depending on the hFE rank. Thermal management allows for 500 mW continuous dissipation at 25°C, extending to 1.5 W when mounted on a ceramic substrate.

Single Bipolar Transistors Feature Summary

• Utilizes FBET and MBIT processes for optimized performance
• Provides fast switching speed characteristics
• Features low collector-to-emitter saturation voltage
• Offers large current capacity and wide safe operating area

Single Bipolar Transistors Applications

• Voltage regulators
• Relay drivers
• Lamp drivers
• Electrical equipment

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'TD' against the manufacturer's EN2019 datasheet to confirm packing type and quantity specifications. Ensure the component meets RoHS compliance requirements if applicable to your design constraints. Cross-reference the exact part number with official distributor catalogs to validate current availability status and confirm that the requested variant matches the intended packaging configuration.

Single Bipolar Transistors Selection Notes

Select this component based on its 50 V collector-emitter breakdown voltage and 3 A continuous current capability. Consider the PCP package dimensions for PCB layout compatibility. Evaluate the required hFE rank (R, S, T, or U) to ensure sufficient DC current gain for your specific base drive conditions. Verify thermal dissipation needs against the 500 mW limit or the 1.5 W rating on ceramic substrates.

Single Bipolar Transistors Part Context

This device belongs to the 2SD1624 series manufactured by onsemi. It is paired with the 2SB1124 PNP transistor within the same family. Both devices share identical electrical ratings and utilize the PCP package. The series is designed for general-purpose switching applications requiring robust current handling and reliable performance in standard electronic circuits.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include the 2SD1624S-TD-H and 2SD1624T-TD-E. These variants share the same core electrical specifications and package type. Verify pinout compatibility and thermal characteristics before implementation. Confirm that any alternative part meets the specific hFE ranking requirements of your circuit design.

Single Bipolar Transistors FAQ

What are the available hFE ranks for the 2SD1624?

The device is classified into four hFE ranks: R (100-200), S (140-280), T (200-400), and U (280-560).

How does mounting affect power dissipation?

Continuous collector dissipation is rated at 500 mW at 25°C ambient temperature. This increases to 1.5 W when mounted on a ceramic substrate measuring 250mm² x 0.8mm.

What is the maximum pulse collector current?

The maximum pulse collector current (ICP) is rated at 6 A under specified test conditions.