2SD16330P

Single Bipolar Transistors Overview

The Panasonic 2SD16330P is a silicon NPN triple diffusion planar type Darlington power transistor designed for voltage switching applications. It features a TO-220F-A1 package with a collector current rating of 5A and a peak collector current of 8A. The device supports a collector-emitter sustaining voltage of 100V and a maximum collector power dissipation of 30W at 25°C. Key electrical characteristics include a forward current transfer ratio (hFE) ranging from 1,500 to 15,000 depending on the rank, a transition frequency of 15MHz, and a junction temperature limit of 150°C.

Single Bipolar Transistors Feature Summary

• High-speed switching capability suitable for voltage control circuits
• Satisfactory linearity of forward current transfer ratio across operating ranges
• Full-pack package design allowing direct installation to heat sinks using a single screw

Single Bipolar Transistors Applications

• Voltage switching circuits
• General electronic equipment
• Office equipment
• Communications equipment
• Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (Q or P) required for your circuit design, as gain varies significantly between classifications. Confirm the latest product status via official channels, as maintenance or discontinuation notices may apply. Ensure thermal management aligns with the specified safe operation area and ambient temperature derating curves provided in the datasheet.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and moderate switching speeds are required for voltage switching tasks. Consider the TO-220F-A1 package for ease of heatsinking compared to standard through-hole options. Evaluate the 100V breakdown voltage against system transients and ensure base drive currents can support the necessary saturation levels for low VCE(sat).

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SD1633 series of NPN Darlington transistors. It utilizes triple diffusion planar technology to achieve robust performance in power switching environments. The device is compliant with the RoHS Directive (EU 2002/95/EC), ensuring adherence to environmental standards for restricted hazardous substances in electronic manufacturing.

Single Bipolar Transistors Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-referencing requires matching the Darlington configuration, TO-220F-A1 package, and equivalent 100V/5A ratings.

Single Bipolar Transistors FAQ

What is the difference between Rank Q and Rank P?

Rank Q specifies a forward current transfer ratio (hFE) range of 1,500 to 6,000, while Rank P specifies a higher range of 5,000 to 15,000.

How is the package designed for thermal management?

The TO-220F-A1 package is a full-pack design that allows the transistor to be installed directly onto a heat sink using a single screw.

What is the maximum collector power dissipation?

The maximum collector power dissipation is 30W when the case temperature is maintained at 25°C.