2SD1664-R-TP

$0.07

Description：TRANS NPN 32V 1A SOT-89
Series：-

SKU:e31612d9fa33 Category: Single Bipolar Transistors Brand: MCC (Micro Commercial Components)

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Product introduction

2SD1664-R-TP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS NPN 32V 1A SOT-89. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1664-R-TP

Description：TRANS NPN 32V 1A SOT-89
Series：-
Mfr：MCC (Micro Commercial Components)
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：32 V
Vce Saturation (Max) @ Ib, Ic：400mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：180 @ 100mA, 3V
Power - Max：500 mW
Frequency - Transition：150MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-243AA
Supplier Device Package：SOT-89
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SD1664-R-TP

2SD1664-R-TP

Single Bipolar Transistors Overview

The MCC 2SD1664-R-TP is an NPN epitaxial planar silicon transistor housed in a SOT-89 surface-mount package. It supports a continuous collector current of 1 A and offers a collector-emitter breakdown voltage of 32 V, with a collector-base breakdown voltage of 40 V. The device features a transition frequency of 150 MHz and operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a DC current gain ranging from 82 to 390 depending on the classification rank, and a maximum collector-emitter saturation voltage of 0.4 V at specified test conditions.

Single Bipolar Transistors Feature Summary

Fast switching speed capability
Low collector-to-emitter saturation voltage
Halogen-free green device construction
Moisture sensitivity level 1 rating

Single Bipolar Transistors Applications

General-purpose amplifier circuits
Switching applications requiring fast response
Medium power output stages

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix -TP confirms tape-and-reel packaging containing 1000 pieces per reel. Confirm RoHS compliance status via the datasheet as the standard part may differ. Ensure the specific hFE bin (P, Q, or R) matches circuit requirements for DC current gain. Validate that the SOT-89 footprint aligns with the target PCB design constraints.

Single Bipolar Transistors Selection Notes

Select this component when a medium-power NPN transistor with low saturation voltage is required in a compact SOT-89 form factor. Consider the 1 A continuous current limit and 32 V breakdown voltage against circuit load demands. Evaluate the thermal resistance of 250°C/W for adequate heat dissipation in the intended enclosure. Verify the required hFE gain bin to ensure proper biasing stability.

Single Bipolar Transistors Part Context

This component belongs to the Micro Commercial Components discrete semiconductor lineup, specifically designed as an NPN epitaxial planar silicon transistor. It serves as a general-purpose solution for amplification and switching tasks where moderate power handling and fast switching are necessary. The SOT-89 package provides a balance between power capability and small footprint suitable for dense board layouts.