2SD1685F

Single Bipolar Transistors Overview

The onsemi 2SD1685F is an NPN single bipolar transistor housed in a TO-126ML package. It supports a collector current of 5A and a collector-emitter voltage of 20V, with a breakdown voltage of 60V at the collector-base junction. The device features a minimum DC current gain (hFE) of 160 at 500mA for the F rank, reaching up to 320. Key electrical parameters include a saturation voltage of 220mV at 3A, a transition frequency of 120MHz, and a maximum power dissipation of 10W at 25°C case temperature.

Single Bipolar Transistors Feature Summary

• Low collector-to-emitter saturation voltage for efficient switching
• Large current capacity suitable for high-power applications
• Fast switching time characteristics
• Plastic-covered leadframe eliminates the need for insulators during mounting

Single Bipolar Transistors Applications

• Strobe drivers
• Voltage regulators
• Relay drivers
• Lamp drivers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'F' to confirm the hFE binning range of 160 to 320, as this parameter varies across the product family. Ensure the procurement documentation specifies the TO-126ML package type and confirms compliance with RoHS directives. Cross-reference the manufacturer's datasheet revision number to validate the absolute maximum ratings and thermal characteristics against your design requirements.

Single Bipolar Transistors Selection Notes

Select the 2SD1685F when a low VCE(sat) and high current handling capability are required in a through-hole TO-126ML form factor. The F ranking provides a guaranteed hFE range of 160 to 320, offering better amplification consistency than lower ranks. Consider the 10W power dissipation limit and the necessity of adequate heatsinking or PCB copper area to maintain safe junction temperatures under continuous load conditions.

Single Bipolar Transistors Part Context

This component belongs to the 2SD1685 series of NPN silicon epitaxial planar transistors manufactured by onsemi. The series includes variants distinguished by their DC current gain rankings, specifically the G and F types. These devices utilize FBET and MBIT processes to achieve fast switching speeds and low saturation voltages, positioning them as robust solutions for general-purpose power switching and driver circuits.

Single Bipolar Transistors Replacement Considerations

The 2SB1124S serves as the complementary PNP counterpart within the same product family, sharing similar -50V/-3A ratings and low VCE(sat) characteristics. For direct replacement, verify that the substitute part matches the TO-126ML package dimensions and pinout configuration to ensure compatibility with existing board layouts and mounting hardware.

Single Bipolar Transistors FAQ

What distinguishes the 2SD1685F from other ranks in the series?

The 'F' suffix indicates a specific DC current gain (hFE) classification. At IC=500mA and VCE=2V, the 2SD1685F guarantees an hFE range of 160 to 320, whereas other ranks like 'G' offer higher gains (280-560) and standard '2SD1685' offers lower gains (120-200).

Is an insulator required when mounting the 2SD1685F?

No, an insulator is not required. The leadframe of the chip is covered with plastic, allowing for direct mounting without additional isolation components.

What is the maximum collector current rating?

The maximum continuous collector current (IC) is rated at 5A. The peak collector current (ICP) can reach 8A under pulsed conditions.