2SD1725T

Single Bipolar Transistors Overview

The 2SD1725T is a single NPN power bipolar junction transistor manufactured by onsemi. It features a collector-emitter breakdown voltage of 100 V and a maximum continuous collector current of 4 A. The device operates with a transition frequency of 180 MHz and supports a power dissipation of 1.2 W in its TO-126LP through-hole package. Saturation characteristics include a maximum Vce of 400 mV at 200 mA base current and 2 A collector current.

Single Bipolar Transistors Feature Summary

• High current handling capability for robust switching applications
• Fast transition frequency suitable for medium-speed signal processing
• Low saturation voltage for improved efficiency in conduction states

Single Bipolar Transistors Applications

• General-purpose power switching circuits
• Medium-power amplifier stages
• Industrial control system interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to ensure the correct package variant, as standard designations may vary. Confirm RoHS compliance status directly with the manufacturer or authorized distributor documentation before integration. Cross-reference the datasheet revision date to ensure alignment with current manufacturing specifications and testing standards.

Single Bipolar Transistors Selection Notes

Select this component when a 100 V rating and 4 A current capacity are required in a through-hole format. Ensure the thermal management solution accommodates the 1.2 W dissipation limit under expected load conditions. Compare against alternative NPN transistors if higher frequency response or surface-mount packaging is necessary for the specific board layout constraints.

Single Bipolar Transistors Part Context

This part belongs to onsemi's discrete semiconductor portfolio, specifically within the power bipolar transistor category. It serves as a standalone active element for circuit design rather than an integrated circuit. The TO-126LP package provides mechanical stability and thermal conductivity advantages over smaller surface-mount alternatives for high-current scenarios.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic replacements must match the 100 V/4 A/NPN specification and TO-126LP footprint to maintain electrical and mechanical compatibility without redesigning the host circuit.