2SD1733TLQ

Single Bipolar Transistors Overview

The 2SD1733TLQ is an NPN power transistor manufactured by ROHM Semiconductor, designed for general-purpose switching and amplification applications. It features a collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 1A. The device utilizes a TUMT3 surface-mount package, equivalent to the SOT-323T form factor, ensuring compact integration into PCB designs. Key electrical characteristics include a low saturation voltage (VCE(sat)) and high DC current gain (hFE), which typically ranges from 270 to 680 depending on the specific binning. The component operates within a storage temperature range of -55°C to 150°C and supports RoHS compliance standards.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability with VCEO rated at 80V for robust circuit protection
• Low collector-emitter saturation voltage to minimize power loss during conduction
• High DC current gain (hFE) providing efficient signal amplification and drive capability
• Surface-mount packaging optimized for automated assembly and space-constrained layouts

Single Bipolar Transistors Applications

• General-purpose switching circuits in consumer electronics
• Amplifier stages requiring moderate current handling
• Complementary pairs with PNP transistors like the 2SB1260 or 2SB1241
• Driver circuits for small loads in industrial control systems

Single Bipolar Transistors Procurement Notes

Verify the exact suffix 'Q' against official ROHM documentation to confirm if it denotes a specific tape-and-reel quantity, quality grade, or regional variant distinct from the standard 'TLR' or 'TL' versions. Ensure the ordering part number matches the required packaging format and that the component status is active for new designs, as some variants may be designated for existing customers only. Cross-reference the datasheet revision date to ensure compatibility with current manufacturing standards.

Single Bipolar Transistors Selection Notes

Select this component when an NPN transistor with 80V blocking capability and 1A current capacity is required in a small surface-mount footprint. It serves as a direct functional complement to PNP devices such as the 2SB1260, 2SB1241, and 2SB1181, making it suitable for push-pull configurations. Consider its hFE linearity and low VCE(sat) for applications demanding efficient power management and precise signal control in compact electronic assemblies.

Single Bipolar Transistors Part Context

The 2SD1733 series belongs to ROHM's lineup of low VCE(sat) power transistors designed for reliability and performance in compact packages. The 'Q' suffix likely indicates a specific packaging or distribution variant, often associated with tape-and-reel quantities or specific customer specifications. This transistor family is engineered to replace older discrete solutions while offering improved thermal and electrical characteristics for modern portable and automotive-grade electronics.

Single Bipolar Transistors Replacement Considerations

The ROHM 2SD1898 is listed as a similar specification alternative within the same manufacturer portfolio. For cross-manufacturer replacements, verify pinout compatibility and electrical ratings against equivalents from other suppliers offering 80V, 1A NPN transistors in SOT-323T compatible packages.