2SD1759TL

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SD1759TL is a single NPN power transistor featuring a Darlington connection housed in a CPT3 (TO-252) surface-mount package. It provides a collector-emitter voltage of 40V and supports a maximum DC collector current of 2A. The device incorporates a built-in 4kΩ base-to-emitter resistor and offers a minimum DC current gain (hFE) of 1000. It operates within a junction temperature range up to 150°C and is designed for high-gain amplification applications.

Single Bipolar Transistors Feature Summary

• Darlington configuration delivers high DC current gain
• Integrated 4kΩ resistor between base and emitter terminals
• Designed to complement the 2SB1183 and 2SB1239 PNP transistors

Single Bipolar Transistors Applications

• High-gain amplifier circuits
• Switching applications requiring high input impedance
• Complementary pairs with specified PNP transistors

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized channels as this part may be subject to obsolescence notices. Confirm that the specific ordering suffix matches the required packaging format. Ensure design compliance with absolute maximum ratings, particularly regarding thermal dissipation limits on printed circuit boards. Consult manufacturer documentation for updated lifecycle status before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when high current gain is required without external biasing resistors. The integrated resistor simplifies drive circuitry. Verify that the 40V collector-emitter rating meets system voltage requirements. Consider the TO-252 package dimensions for PCB layout compatibility. Evaluate thermal management needs given the 1W dissipation limit on standard PCBs versus 10W with heatsinking.

Single Bipolar Transistors Part Context

This NPN transistor belongs to ROHM's discrete semiconductor lineup, specifically categorized as a power transistor. It is functionally paired with complementary PNP devices like the 2SB1183. The component utilizes silicon epitaxial planar technology and is available in tape-and-reel packaging for automated assembly processes.

Single Bipolar Transistors Replacement Considerations

The 2SD1861 serves as an equivalent alternative with identical electrical characteristics but differs in packaging code.