2SD1785

Single Bipolar Transistors Overview

The 2SD1785 is a silicon NPN triple diffused planar transistor designed as the complement to the 2SB1258. It features a collector-emitter voltage rating of 120 V and a continuous collector current capacity of 6 A. The device operates within a junction temperature range of -55 °C to +150 °C, with a maximum power dissipation of 30 W at 25 °C case temperature. Electrical characteristics include a minimum DC current gain (hFE) of 2000 at 10 mA collector current and a typical transition frequency (fT) of 70 MHz.

Single Bipolar Transistors Feature Summary

• High DC current gain suitable for amplification applications
• Triple diffused planar construction for robust performance
• Designed specifically as the complementary pair to the 2SB1258 PNP transistor

Single Bipolar Transistors Applications

• Driver for solenoids
• Driver for relays
• Driver for motors
• Series regulators
• General purpose switching

Single Bipolar Transistors Procurement Notes

Verify the component datasheet directly from Sanken Electric USA Inc. official channels to confirm current specifications. Ensure that the procurement documentation matches the FM20 (TO-220F) package dimensions and pinout configuration. Confirm compliance with RoHS standards and verify the specific lot number against manufacturing records for traceability purposes.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN transistor is required to complement the 2SB1258 in push-pull or driver circuits. Evaluate the thermal management requirements carefully, as the 30 W power dissipation rating depends on maintaining an adequate heatsink connection. Verify that the 120 V breakdown voltage meets the circuit's peak operating conditions.

Single Bipolar Transistors Part Context

This component belongs to the family of discrete silicon NPN transistors manufactured by Sanken Electric USA Inc. It utilizes a triple diffused planar process technology. The device is packaged in the FM20 (TO-220F) format, which facilitates surface mounting while providing sufficient thermal conductivity for power handling applications.

Single Bipolar Transistors Replacement Considerations

The 2SD1785 is explicitly documented as the complement to the 2SB1258. When replacing components in existing designs, ensure the substitute part matches the FM20 package footprint and maintains equivalent electrical ratings for voltage, current, and gain.