2SD1801S-E

Single Bipolar Transistors Overview

The 2SD1801S-E is a silicon NPN single bipolar junction transistor manufactured by onsemi. It utilizes FBET and MBIT processes to achieve high current capacitance and wide safe operating area (ASO). The device features low collector-to-emitter saturation voltage and fast switching speed, housed in a small TO-251-3 surface-mount package. Key electrical ratings include a maximum collector-emitter voltage of 50V, a continuous collector current of 2A, and a power dissipation capability of 1W. The transition frequency is specified at 150 MHz, with a maximum operating temperature of +150°C.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT processes for enhanced performance
• Provides large current capacitance and wide ASO
• Features low collector-to-emitter saturation voltage
• Ensures fast switching speed

Single Bipolar Transistors Applications

• Voltage regulators
• Relay drivers
• Lamp drivers
• Electrical equipment

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'E' against the official datasheet to confirm compliance status and packaging details. Confirm RoHS certification requirements prior to ordering. Check for end-of-life notices or alternative part recommendations from onsemi due to potential manufacturing changes. Ensure the TO-251-3 package footprint matches the target PCB design constraints.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring compact NPN switching with moderate current handling. The low VCE(sat) makes it suitable for efficient power management circuits. Compare the 2A rating against peak load currents to ensure adequate margin. Consider the thermal resistance of the TO-251-3 package for heat dissipation planning in enclosed environments.

Single Bipolar Transistors Part Context

This part belongs to the 2SD1801 series of bipolar transistors designed for general-purpose high-current switching. It is often paired with its PNP complement, the 2SB1201S-E, for complementary push-pull configurations. The series emphasizes miniaturization through its slim package design, facilitating smaller form factors in consumer electronics and industrial control systems.

Single Bipolar Transistors Replacement Considerations

Direct substitutes may include other 50V NPN transistors in TO-251 packages with similar current and voltage ratings. Verify pinout compatibility and thermal characteristics before substitution. Consult onsemi documentation for recommended cross-reference parts if the 2SD1801S-E is discontinued.