2SD1801T-E

Single Bipolar Transistors Overview

The onsemi 2SD1801T-E is a single NPN epitaxial planar silicon bipolar junction transistor designed for high-current switching applications. It features a collector-emitter voltage rating of 50 V and a continuous collector current capacity of 2 A, with a peak collector current of 5 A. The device offers a low collector-to-emitter saturation voltage of 150 mV and a gain-bandwidth product of 150 MHz. Power dissipation is rated at 800 mW in the TO-252-3 (DPAK) surface-mount package. The maximum operating temperature reaches +150°C, supporting robust performance in voltage regulators, relay drivers, and lamp driver circuits.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT processes for enhanced reliability
• Provides large current capacity and wide safe operating area
• Features low collector-to-emitter saturation voltage for efficiency
• Delivers fast switching speed suitable for high-frequency applications

Single Bipolar Transistors Applications

• Voltage regulators
• Relay drivers
• Lamp drivers
• General electrical equipment

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official documentation to confirm pinout and thermal characteristics. Confirm RoHS compliance status through manufacturer declarations. Check for end-of-life notices or production discontinuation updates prior to final design approval. Ensure the selected package variant matches the intended PCB footprint requirements.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring moderate current handling with efficient switching capabilities. The low saturation voltage minimizes power loss during conduction phases. Consider the thermal resistance of the TO-252-3 package for adequate heat dissipation. Evaluate the 150 MHz bandwidth against the required signal frequency for optimal switching performance.

Single Bipolar Transistors Part Context

This part belongs to the 2SD1801 series of high-current switching transistors manufactured by onsemi. It is often paired with its PNP counterpart, the 2SB1201, for complementary push-pull configurations. The series utilizes advanced epitaxial planar technology to achieve improved current density and thermal stability compared to older generation discrete devices.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SD1801T-TL-E variant from onsemi, which shares identical electrical specifications and package dimensions. Verify that any alternative replacement maintains the same TP-FA package outline and pin configuration to ensure mechanical compatibility.