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2SD1802S-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 3A TP. Review the specifications below when checking this part for your BOM.
The onsemi 2SD1802S-E is a silicon NPN bipolar junction transistor (BJT) designed for high-current switching applications. It features a maximum collector current of 5 A and a collector-emitter voltage rating of 50 V. The device operates in a TO-251-3 surface-mount package with through-hole compatibility. Key electrical specifications include a transition frequency of 150 MHz, a power dissipation capacity of 1 W, and a collector-emitter saturation voltage of 190 mV at specified test conditions. The component supports a maximum operating temperature of +150°C.
Verify the specific suffix 'E' against the manufacturer's latest documentation to confirm compliance with current environmental directives and material declarations. Confirm availability status as distribution channels may list this component as end-of-life or limited stock. Ensure the ordering part number matches the exact package variant required for the target PCB assembly process.
Select this component when a single NPN transistor with moderate voltage ratings and high current capacity is required in a compact form factor. Compare the 190 mV saturation voltage against alternative devices to ensure thermal management requirements are met within the 1 W power dissipation limit. Verify that the TO-251-3 package dimensions align with the available board space and mounting constraints.
This device belongs to the 2SD1802 series of bipolar transistors manufactured by onsemi. It serves as the NPN counterpart in complementary pairs often used in push-pull configurations. The series is engineered for general-purpose high-current switching, offering a balance between current handling, switching speed, and low saturation voltage in a slim package design.
Public confirmed substitute part numbers: 2SD1802T-E.
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