Single Bipolar Transistors 2SD1802S-E product image

2SD1802S-E

  • Description:TRANS NPN 50V 3A TP
  • Series:-

SKU:c4e645d30d6c Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

2SD1802S-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 3A TP. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1802S-E

  • Description:TRANS NPN 50V 3A TP
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 2A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:140 @ 100mA, 2V
  • Power - Max:1 W
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA
  • Supplier Device Package:TP
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD1802S-E

2SD1802S-E

Single Bipolar Transistors Overview

The onsemi 2SD1802S-E is a silicon NPN bipolar junction transistor (BJT) designed for high-current switching applications. It features a maximum collector current of 5 A and a collector-emitter voltage rating of 50 V. The device operates in a TO-251-3 surface-mount package with through-hole compatibility. Key electrical specifications include a transition frequency of 150 MHz, a power dissipation capacity of 1 W, and a collector-emitter saturation voltage of 190 mV at specified test conditions. The component supports a maximum operating temperature of +150°C.

Single Bipolar Transistors Feature Summary

  • High current handling capability suitable for demanding switching loads
  • Low collector-to-emitter saturation voltage for improved efficiency
  • Fast switching speed characterized by high transition frequency
  • Compact physical footprint facilitating dense circuit board layouts

Single Bipolar Transistors Applications

  • Relay drivers
  • High-speed inverters
  • DC-DC converters
  • General high-current switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'E' against the manufacturer's latest documentation to confirm compliance with current environmental directives and material declarations. Confirm availability status as distribution channels may list this component as end-of-life or limited stock. Ensure the ordering part number matches the exact package variant required for the target PCB assembly process.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor with moderate voltage ratings and high current capacity is required in a compact form factor. Compare the 190 mV saturation voltage against alternative devices to ensure thermal management requirements are met within the 1 W power dissipation limit. Verify that the TO-251-3 package dimensions align with the available board space and mounting constraints.

Single Bipolar Transistors Part Context

This device belongs to the 2SD1802 series of bipolar transistors manufactured by onsemi. It serves as the NPN counterpart in complementary pairs often used in push-pull configurations. The series is engineered for general-purpose high-current switching, offering a balance between current handling, switching speed, and low saturation voltage in a slim package design.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers: 2SD1802T-E.

2SD1802S-E2SD1802S-E

Click on the inquiry