2SD1803S-TL-H

Single Bipolar Transistors Overview

The onsemi 2SD1803S-TL-H is an NPN silicon bipolar junction transistor designed for high-current switching applications. It features a maximum collector current of 5 A and a collector-emitter voltage rating of 50 V. The device utilizes the TP-FA package, which corresponds to the SC-63/TO-252 form factor. Key electrical characteristics include a gain-bandwidth product (fT) of up to 180 MHz at 1 A collector current and a low collector-to-emitter saturation voltage. The component supports a maximum junction temperature of 150 °C and is supplied in tape-and-reel packaging.

Single Bipolar Transistors Feature Summary

• Low collector-to-emitter saturation voltage for efficient power handling
• High current capability combined with high transition frequency
• Excellent DC current gain linearity across operating ranges
• Fast switching speed suitable for high-frequency inverters

Single Bipolar Transistors Applications

• Relay drivers
• High-speed inverters
• Power converters
• General high-current switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'TL' confirms the TP-FA (TO-252) surface-mount package configuration. Confirm RoHS compliance status as the datasheet distinguishes between standard and halogen-free variants based on suffixes. Ensure the supplier provides the correct minimum packing quantity associated with the reel format specified in the official documentation.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring robust NPN switching with high current capacity. The low saturation voltage makes it suitable for applications where power loss minimization is critical. Consider the thermal dissipation requirements relative to the TO-252 package size and ensure the drive circuitry can support the necessary base current for full saturation.

Single Bipolar Transistors Part Context

This part belongs to the 2SD1803 series of high-current switching transistors manufactured by onsemi. It serves as the NPN counterpart to the 2SB1203 PNP transistor within the same family. The series is engineered to provide compact solutions for modern electronic sets due to its slim package design while maintaining high performance metrics for industrial and consumer electronics.

Single Bipolar Transistors Replacement Considerations

Consult the datasheet for direct pin-compatible alternatives within the same series or verify cross-reference data from authorized distributors. Ensure any substitute maintains the 50V VCEO and 5A IC ratings. Check if the replacement offers identical hFE ranking classifications to guarantee consistent gain performance in existing designs.

Single Bipolar Transistors FAQ

What is the maximum collector current rating for the 2SD1803S-TL-H?

The absolute maximum DC collector current is rated at 5 A.

Does the 2SD1803S-TL-H have a built-in diode?

No, the 2SD1803 is a single-element NPN transistor without an integrated diode.

What is the typical gain-bandwidth product (fT)?

The gain-bandwidth product is typically 180 MHz when measured at a collector current of 1 A and VCE of 5 V.